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This article is cited in 1 scientific paper (total in 1 paper)
Micro- and nanocrystalline, porous, composite semiconductors
Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
M. A. Elistratovaa, D. S. Poloskina, D. N. Goryacheva, I. B. Zakharovab, O. M. Sreselia a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
Abstract:
Radiation stability of the nanoporous silicon under $\gamma$ irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
Received: 21.12.2017 Accepted: 25.12.2017
Citation:
M. A. Elistratova, D. S. Poloskin, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli, “Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 921–925; Semiconductors, 52:8 (2018), 1051–1055
Linking options:
https://www.mathnet.ru/eng/phts5764 https://www.mathnet.ru/eng/phts/v52/i8/p921
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