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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 921–925
DOI: https://doi.org/10.21883/FTP.2018.08.46220.8807 (Mi phts5764) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Micro- and nanocrystalline, porous, composite semiconductors

Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation

M. A. Elistratovaa, D. S. Poloskina, D. N. Goryacheva, I. B. Zakharovab, O. M. Sreselia

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
Full-text PDF (346 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2018.08.46220.8807
Abstract: Radiation stability of the nanoporous silicon under $\gamma$ irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.
Received: 21.12.2017
Accepted: 25.12.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1051–1055
DOI: https://doi.org/10.1134/S1063782618080067
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Elistratova, D. S. Poloskin, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli, “Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 921–925; Semiconductors, 52:8 (2018), 1051–1055
Citation in format AMSBIB
\Bibitem{EliPolGor18}
\by M.~A.~Elistratova, D.~S.~Poloskin, D.~N.~Goryachev, I.~B.~Zakharova, O.~M.~Sreseli
\paper Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 921--925
\mathnet{http://mi.mathnet.ru/phts5764}
\crossref{https://doi.org/10.21883/FTP.2018.08.46220.8807}
\elib{https://elibrary.ru/item.asp?id=35269437}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1051--1055
\crossref{https://doi.org/10.1134/S1063782618080067}
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  • https://www.mathnet.ru/eng/phts/v52/i8/p921
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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