|
|
Publications in Math-Net.Ru |
Citations |
|
2018 |
1. |
M. Yu. Yesin, A. I. Nikiforov, V. A. Timofeev, A. R. Tuktamyshev, V. I. Mashanov, I. D. Loshkarev, A. S. Deryabin, O. P. Pchelyakov, “Formation of a stepped Si(100) surface and its effect on the growth of Ge islands”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 409–413 ; Semiconductors, 52:3 (2018), 390–393 |
|
2016 |
2. |
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova, “Strained multilayer structures with pseudomorphic GeSiSn layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1610–1614 ; Semiconductors, 50:12 (2016), 1584–1588 |
5
|
|
2007 |
3. |
A. B. Talochkin, V. A. Markov, V. I. Mashanov, “Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:5 (2007), 397–400 ; JETP Letters, 86:5 (2007), 344–347 |
2
|
|
1965 |
4. |
V. I. Mashanov, “Ruled surfaces of a congruence of lines in a space of constant curvature”, Sibirsk. Mat. Zh., 6:1 (1965), 149–164 |
|
Organisations |
|
|
|
|