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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 86, Issue 5, Pages 397–400 (Mi jetpl853)  

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si

A. B. Talochkin, V. A. Markov, V. I. Mashanov

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
Full-text PDF (653 kB) Citations (2)
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Abstract: Raman scattering on optical phonons in Si/Ge/Si structures with Ge quantum dots grown by molecular beam epitaxy at low temperatures 200–300°C has been investigated. A pseudomorphic state of an array of Ge quantum dots to a Si matrix with an ideally sharp interface has been obtained. Features associated with the inelastic relaxation of mechanical stresses have been revealed in the Raman spectrum. Two mechanisms of stress relaxation are separated. It has been shown that the spectrum of the electronic states of the array differs significantly from the set of the discrete levels of a single quantum dot, because the relaxation is inhomogeneous.
Received: 16.07.2007
English version:
Journal of Experimental and Theoretical Physics Letters, 2007, Volume 86, Issue 5, Pages 344–347
DOI: https://doi.org/10.1134/S0021364007170146
Bibliographic databases:
Document Type: Article
PACS: 73.21.La
Language: Russian


Citation: A. B. Talochkin, V. A. Markov, V. I. Mashanov, “Relaxation of mechanical stresses in an array of Ge quantum dots obtained in Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:5 (2007), 397–400; JETP Letters, 86:5 (2007), 344–347
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