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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. G. Lyublinsky, E. I. Belyakova, I. V. Grekhov, “Numerical and experimental study of an optimized $p$-SOS diode”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 409–415   ; Tech. Phys., 64:3 (2019), 373–379 |
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2017 |
| 2. |
N. I. Podolska, A. G. Lyublinsky, I. V. Grekhov, “The numerical simulation of the nanosecond switching of a $p$-SOS diode”, Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017), 1790–1793 ; Tech. Phys., 62:12 (2017), 1787–1790 |
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| 3. |
I. V. Grekhov, A. G. Lyublinsky, E. M. Mikhailov, D. S. Poloskin, A. A. Skidanov, “Analysis of integrated thyristor switching-off by a reverse gate pulse current”, Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017), 1682–1686 ; Tech. Phys., 62:11 (2017), 1684–1688 |
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I. V. Grekhov, A. G. Lyublinsky, Sh. A. Yusupova, “High-power subnanosecond silicon avalanche shaper”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 793–796 ; Tech. Phys., 62:5 (2017), 812–815 |
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| 5. |
I. V. Grekhov, A. G. Lyublinsky, A. A. Skidanov, “Analysis of the process of turning off an integrated thyristor with external MOSFET control”, Zhurnal Tekhnicheskoi Fiziki, 87:1 (2017), 155–158 ; Tech. Phys., 62:1 (2017), 183–186 |
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2016 |
| 6. |
I. V. Grekhov, A. G. Lyublinsky, E. I. Belyakova, “Powerful diode nanosecond current opening switch made of $p$-silicon ($p$-SOS)”, Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016), 106–109 ; Tech. Phys., 61:3 (2016), 424–427 |
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