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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 5, Pages 793–796
DOI: https://doi.org/10.21883/JTF.2017.05.44459.1993
(Mi jtf6248)
 

This article is cited in 5 scientific papers (total in 5 papers)

Brief Communications

High-power subnanosecond silicon avalanche shaper

I. V. Grekhov, A. G. Lyublinsky, Sh. A. Yusupova

Ioffe Institute, St. Petersburg
Full-text PDF (124 kB) Citations (5)
Abstract: The ultrafast (subnanosecond) switching of a high-voltage silicon avalanche shaper (SAS) diode from a blocking to conducting state is performed by applying an overvoltage pulse with a wavefront rise-rate of $\sim$10$^{12}$ V/s in the reverse direction. The forming under this condition impact ionization front fills in the diode base layer with electron-hole plasma and switches the diode to the conducting state. Besides, it is important to prevent the possible breakdown over the diode structure surface while the overvoltage pulse is applied. The first results of the investigation of principally new SAS diode design is presented. New diode construction completely excludes edge contour degradation by the overvoltage pulse. Our experiments show the usefulness of the suggested diode construction and the importance of further investigations to determine its operation limits.
Received: 13.07.2016
English version:
Technical Physics, 2017, Volume 62, Issue 5, Pages 812–815
DOI: https://doi.org/10.1134/S1063784217050115
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Grekhov, A. G. Lyublinsky, Sh. A. Yusupova, “High-power subnanosecond silicon avalanche shaper”, Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017), 793–796; Tech. Phys., 62:5 (2017), 812–815
Citation in format AMSBIB
\Bibitem{GreLyuYus17}
\by I.~V.~Grekhov, A.~G.~Lyublinsky, Sh.~A.~Yusupova
\paper High-power subnanosecond silicon avalanche shaper
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 5
\pages 793--796
\mathnet{http://mi.mathnet.ru/jtf6248}
\crossref{https://doi.org/10.21883/JTF.2017.05.44459.1993}
\elib{https://elibrary.ru/item.asp?id=29365798}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 5
\pages 812--815
\crossref{https://doi.org/10.1134/S1063784217050115}
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  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
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