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This article is cited in 4 scientific papers (total in 4 papers)
Brief Communications
Analysis of the process of turning off an integrated thyristor with external MOSFET control
I. V. Grekhova, A. G. Lyublinskya, A. A. Skidanovb a Ioffe Institute, St. Petersburg
b SC "VSP-Mikron", Voronezh
Abstract:
The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.
Received: 14.06.2016
Citation:
I. V. Grekhov, A. G. Lyublinsky, A. A. Skidanov, “Analysis of the process of turning off an integrated thyristor with external MOSFET control”, Zhurnal Tekhnicheskoi Fiziki, 87:1 (2017), 155–158; Tech. Phys., 62:1 (2017), 183–186
Linking options:
https://www.mathnet.ru/eng/jtf6355 https://www.mathnet.ru/eng/jtf/v87/i1/p155
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Abstract page: | 36 | Full-text PDF : | 8 |
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