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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
Sergey V. Bulyarskii, Liubov N. Vostretsova, Valeriya A. Ribenek, “Tunneling recombination in GaN/InGaN LEDs with a single quantum well”, Nanosystems: Physics, Chemistry, Mathematics, 15:2 (2024), 204–214  |
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2022 |
| 2. |
L. N. Vostretsova, M. Yu. Makhmud-Akhunov, A. A. Chulakova, “The degradation of InGaN/GaN-based structures under the action of gamma-radiation”, University proceedings. Volga region. Physical and mathematical sciences, 2022, no. 3, 72–84 |
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2021 |
| 3. |
D. Y. Vostretsov, L. N. Vostretsova, T. S. Smirnova, D. P. Dmitriev, “Influence of backlighting on current-voltage characteristics of InGaN/GaN-based structures with back-shift”, Izv. Sarat. Univ. Physics, 21:4 (2021), 372–380 |
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2020 |
| 4. |
L. N. Vostretsova, A. A. Adamovich, “The effect of $\gamma$-radiation on the electrical and optical characteristics of InGàN/GàN leds”, University proceedings. Volga region. Physical and mathematical sciences, 2020, no. 4, 69–79 |
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2019 |
| 5. |
L. N. Vostretsova, A. S. Ambrozevich, T. E. Kuznetsova, “Volt-ampere characteristics of InGaN/GaN-based structures at high level of injection”, University proceedings. Volga region. Physical and mathematical sciences, 2019, no. 2, 75–86 |
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2016 |
| 6. |
S. V. Bulyarskii, L. N. Vostretsova, S. A. Gavrilov, “Photodetectors based on CuInS$_2$”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 106–111  ; Semiconductors, 50:1 (2016), 106–111 |
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2012 |
| 7. |
S. V. Bulyarskii, L. N. Vostretsova, M. S. Ermakov, “Determination of energy parameters of electronic states in semiconductor carbon nanotubes”, University proceedings. Volga region. Physical and mathematical sciences, 2012, no. 4, 205–213 |
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2009 |
| 8. |
S. V. Bulyarskii, L. N. Vostretsova, “Modeling of current transfer processes in carbon nanotubes”, University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 3, 138–144 |
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