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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1, Pages 106–111
(Mi phts6570)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor physics
Photodetectors based on CuInS$_2$
S. V. Bulyarskiia, L. N. Vostretsovaa, S. A. Gavrilovb a Ulyanovsk State University
b National Research University of Electronic Technology
Abstract:
It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS$_2$ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 $\times$ 10$^{16}$ cm$^{-2}$.
Received: 23.03.2015 Accepted: 30.03.2015
Citation:
S. V. Bulyarskii, L. N. Vostretsova, S. A. Gavrilov, “Photodetectors based on CuInS$_2$”, Fizika i Tekhnika Poluprovodnikov, 50:1 (2016), 106–111; Semiconductors, 50:1 (2016), 106–111
Linking options:
https://www.mathnet.ru/eng/phts6570 https://www.mathnet.ru/eng/phts/v50/i1/p106
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Abstract page: | 25 | Full-text PDF : | 8 |
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