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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pschin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova, “Topology of PbSnTe:In layers versus indium concentration”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1040–1044 ; Tech. Phys., 66:7 (2021), 878–882 |
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2020 |
2. |
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestnyi, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov, “Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1122–1128 ; Semiconductors, 54:10 (2020), 1325–1331 |
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3. |
A. V. Ikonnikov, V. S. Dudin, A. I. Artamkin, A. N. Akimov, A. E. Klimov, O. E. Tereshchenko, L. I. Ryabova, D. R. Khokhlov, “Optical and transport properties of epitaxial Pb$_{0.74}$Sn$_{0.26}$Te(In) films with a modifiable surface”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 896–901 ; Semiconductors, 54:9 (2020), 1086–1091 |
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4. |
A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestnyi, N. S. Pschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova, “Sign-alternating photoconductivity in PbSnTe : In films in the space-charge-limited current regime”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 796–800 ; Semiconductors, 54:8 (2020), 951–955 |
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2019 |
5. |
A. S. Tarasov, D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, N. S. Pschin, S. P. Suprun, E. V. Fedosenko, V. N. Sherstyakova, O. E. Tereshchenko, “Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1795–1799 ; Tech. Phys., 64:11 (2019), 1704–1708 |
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6. |
A. V. Ikonnikov, V. I. Chernichkin, V. S. Dudin, D. A. Akopian, A. N. Akimov, A. E. Klimov, O. E. Tereshchenko, L. I. Ryabova, D. R. Khokhlov, “Features of the impurity-photoconductivity spectra of PbSnTe(In) epitaxial films with temperature changes”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1303–1308 ; Semiconductors, 53:9 (2019), 1272–1277 |
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7. |
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko, “Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1207–1211 ; Semiconductors, 53:9 (2019), 1182–1186 |
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2018 |
8. |
A. N. Akimov, A. E. Klimov, V. S. Epov, “Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1401–1406 ; Semiconductors, 52:12 (2018), 1505–1510 |
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2017 |
9. |
A. N. Akimov, A. E. Klimov, N. S. Pschin, A. S. Yaroshevich, M. L. Savchenko, V. S. Epov, E. V. Fedosenko, “Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1574–1578 ; Semiconductors, 51:11 (2017), 1522–1526 |
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10. |
A. N. Akimov, A. E. Klimov, S. P. Suprun, V. S. Epov, “Effect of the surface on transport phenomena in PbSnTe : In/BaF$_{2}$ films”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1569–1573 ; Semiconductors, 51:11 (2017), 1517–1521 |
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2016 |
11. |
A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev, V. V. Rumyantsev, “Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1713–1719 ; Semiconductors, 50:12 (2016), 1684–1690 |
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12. |
A. N. Akimov, A. E. Klimov, I. G. Neizvestnyi, V. N. Shumskii, V. S. Epov, “Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 447–453 ; Semiconductors, 50:4 (2016), 440–446 |
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