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This article is cited in 2 scientific papers (total in 2 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current
A. N. Akimova, A. E. Klimovab, V. S. Epova a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
Abstract:
At $T$ = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF$_2$(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 10$^3$ times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.
Keywords:
PbSnTe, Space Charge Limited Current (SCLC), Localized Surface States, SCLC Mode, Topological Crystalline Insulators (TCI).
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
A. N. Akimov, A. E. Klimov, V. S. Epov, “Field effect in PbSnTe : In films with low conductivity in the mode of injection from contacts and space-charge limitation of the current”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1401–1406; Semiconductors, 52:12 (2018), 1505–1510
Linking options:
https://www.mathnet.ru/eng/phts5650 https://www.mathnet.ru/eng/phts/v52/i12/p1401
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