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This article is cited in 2 scientific papers (total in 2 papers)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
A. E. Klimovab, A. N. Akimova, I. O. Akhundova, V. A. Golyashovac, D. V. Gorshkova, D. V. Ishchenkoa, G. Yu. Sidorova, S. P. Supruna, A. S. Tarasova, V. S. Epova, O. E. Tereshchenkoac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
Abstract:
The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10$^5$ are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al$_2$O$_3$ layer.
Keywords:
PbSnTe:In solid solution, field effect, surface conductivity, MIS structure.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, G. Yu. Sidorov, S. P. Suprun, A. S. Tarasov, V. S. Epov, O. E. Tereshchenko, “Surface ñonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1207–1211; Semiconductors, 53:9 (2019), 1182–1186
Linking options:
https://www.mathnet.ru/eng/phts5403 https://www.mathnet.ru/eng/phts/v53/i9/p1207
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