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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
F. Yu. Solomkin, A. Yu. Samunin, N. V. Zaitseva, N. V. Sharenkova, G. N. Isachenko, S. V. Novikov, “Investigation of the interface layer phase composition obtained by hot pressing of Cr and Si”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1115–1118 |
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2020 |
2. |
S. V. Novikov, V. S. Kuznetsova, A. Burkov, I. Shumann, “Dependence of the crystallization kinetics of Cr$_{0.26}$Si$_{0.74}$ thin films on their thickness”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 355–357 ; Semiconductors, 54:4 (2020), 426–428 |
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3. |
A. S. Usikov, S. P. Lebedev, A. D. Roenkov, I. S. Barash, S. V. Novikov, M. V. Puzyk, A. V. Zubov, Yu. N. Makarov, A. A. Lebedev, “Studying the sensitivity of graphene for biosensor applications”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6 ; Tech. Phys. Lett., 46:5 (2020), 462–465 |
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2017 |
4. |
A. S. Orekhov, V. V. Klechkovskaya, E. V. Rakova, F. Yu. Solomkin, S. V. Novikov, L. V. Bochkov, G. N. Isachenko, “The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 925–928 ; Semiconductors, 51:7 (2017), 887–890 |
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5. |
A. Burkov, S. V. Novikov, V. K. Zaitsev, H. Reith, “Transport properties of cobalt monosilicide and its alloys at low temperatures”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 723–725 ; Semiconductors, 51:6 (2017), 689–691 |
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