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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 925–928
DOI: https://doi.org/10.21883/FTP.2017.07.44644.30 (Mi phts6101) 		 
This article is cited in 1 scientific paper (total in 1 paper)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals

A. S. Orekhovab, V. V. Klechkovskayaa, E. V. Rakovaa, F. Yu. Solomkinc, S. V. Novikovc, L. V. Bochkovc, G. N. Isachenkodc

a Shubnikov Institute of Crystallography of Federal Research Centre "Crystallography and Photonics" of the Russian Academy of Sciences, Moscow, Russia
b National Research Centre "Kurchatov Institute", Moscow
c Ioffe Institute, St. Petersburg
d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (1414 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2017.07.44644.30
Abstract: The reason why manganese monosilicide inclusions are formed during the growth of higher manganese silicide (HMS) crystals has not been studied in detail so far. Changes in the amount and density of these inclusions are greatly influenced by dopants. In this study, the structure of HMS crystals with various contents of germanium as a doping element is examined. It is found that raising the germanium content to 1 at % results in the fragmentation of layered manganese monosilicide inclusions and, simultaneously, leads to significant changes in the thermoelectric properties of HMS crystals. The results of the microstructural analysis of HMS crystals in relation to the germanium concentration may be of use for understanding the mechanism by which the manganese monosilicide phase is formed during the growth of higher manganese silicide crystals.
Received: 27.12.2016
Accepted: 12.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 887–890
DOI: https://doi.org/10.1134/S1063782617070302
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Orekhov, V. V. Klechkovskaya, E. V. Rakova, F. Yu. Solomkin, S. V. Novikov, L. V. Bochkov, G. N. Isachenko, “The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 925–928; Semiconductors, 51:7 (2017), 887–890
Citation in format AMSBIB
\Bibitem{OreKleRak17}
\by A.~S.~Orekhov, V.~V.~Klechkovskaya, E.~V.~Rakova, F.~Yu.~Solomkin, S.~V.~Novikov, L.~V.~Bochkov, G.~N.~Isachenko
\paper The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 925--928
\mathnet{http://mi.mathnet.ru/phts6101}
\crossref{https://doi.org/10.21883/FTP.2017.07.44644.30}
\elib{https://elibrary.ru/item.asp?id=29772359}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 887--890
\crossref{https://doi.org/10.1134/S1063782617070302}
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