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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 4, Pages 355–357
DOI: https://doi.org/10.21883/FTP.2020.04.49139.9337 (Mi phts5242) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Surface, interfaces, thin films

Dependence of the crystallization kinetics of Cr$_{0.26}$Si$_{0.74}$ thin films on their thickness

S. V. Novikova, V. S. Kuznetsovaa, A. Burkova, I. Shumannb

a Ioffe Institute, St. Petersburg
b Leibniz Institute for Solid State and Materials Research, Dresden, Germany
Full-text PDF (204 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2020.04.49139.9337
Abstract: In this work we study thermoelectric properties of Cr$_{0.26}$Si$_{0.74}$ thin films with thickness of 11, 14, 21, 31, 56, 74, 115 nm. The films were produced by magnetron sputtering onto unheated substrate. The films had amorphous structure. Thermoelectric properties of samples were studied during thermal annealing in pure helium atmosphere. Changing of thermoelectric properties during annealing indicated changing in structure. It was found that kinetic of crystallization depends on the thickness of the films. The thermopower of nanocrystalline films decreases with increasing film thickness, and the power factor reaches its maximum value in films with a thickness of 31 nm.
Keywords: thermoelectricity, silicides, nanocrystallization, thin film, power factor.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation MK-1452.2019.2
The study was supported by the President of the Russian Federation, grant MK-1452.2019.2.
Received: 18.12.2019
Revised: 25.12.2019
Accepted: 25.12.2019
English version:
Semiconductors, 2020, Volume 54, Issue 4, Pages 426–428
DOI: https://doi.org/10.1134/S1063782620040107
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Novikov, V. S. Kuznetsova, A. Burkov, I. Shumann, “Dependence of the crystallization kinetics of Cr$_{0.26}$Si$_{0.74}$ thin films on their thickness”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 355–357; Semiconductors, 54:4 (2020), 426–428
Citation in format AMSBIB
\Bibitem{NovKuzBur20}
\by S.~V.~Novikov, V.~S.~Kuznetsova, A.~Burkov, I.~Shumann
\paper Dependence of the crystallization kinetics of Cr$_{0.26}$Si$_{0.74}$ thin films on their thickness
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 4
\pages 355--357
\mathnet{http://mi.mathnet.ru/phts5242}
\crossref{https://doi.org/10.21883/FTP.2020.04.49139.9337}
\elib{https://elibrary.ru/item.asp?id=42776696}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 4
\pages 426--428
\crossref{https://doi.org/10.1134/S1063782620040107}
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  • https://www.mathnet.ru/eng/phts/v54/i4/p355
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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