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Publications in Math-Net.Ru |
Citations |
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2021 |
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A. S. Gusev, N. I. Kargin, S. M. Ryndya, G. K. Safaraliev, N. V. Siglovaya, M. O. Smirnova, I. O. Solomatin, A. O. Sultanov, A. A. Timofeev, “Relaxation of mechanical stress in epitaxial films of cubic silicon carbide on silicon substrates with a buffer porous layer”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 988–996   ; Tech. Phys., 66:7 (2021), 869–877  |
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| 2. |
N. V. Gaponenko, P. A. Kholov, Yu. D. Kornilava, E. I. Lashkovskaya, V. A. Labunov, I. L. Martynov, E. V. Osipov, A. A. Chistyakov, N. I. Kargin, T. F. Raichenok, S. A. Tikhomirov, “Sol–gel derived photonic crystals BaTiO$_{3}$/SiO$_{2}$”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 912–915 ; Semiconductors, 55:11 (2021), 831–834 |
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2019 |
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A. N. Vinichenko, D. A. Safonov, N. I. Kargin, I. S. Vasil'evskii, “Electron-quantum transport in pseudomorphic and metamorphic In$_{0.2}$Ga$_{0.8}$As-based quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 359–364 ; Semiconductors, 53:3 (2019), 339–344 |
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2018 |
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I. Yu. Dolinskii, K. P. Katin, K. S. Grishakov, V. S. Prudkovskii, N. I. Kargin, M. M. Maslov, “Influence of mechanical stretching on adsorption properties of nitrogen-doped graphene”, Fizika Tverdogo Tela, 60:4 (2018), 816–820 ; Phys. Solid State, 60:4 (2018), 821–825 |
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| 5. |
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 201–206 ; Semiconductors, 52:2 (2018), 189–194 |
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D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Electron effective mass and momentum relaxation time in one-sided $\delta$-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells with high electron density”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 120–127 ; Tech. Phys. Lett., 44:12 (2018), 1174–1176 |
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D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018), 34–41 ; Tech. Phys. Lett., 44:2 (2018), 145–148 |
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