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This article is cited in 9 scientific papers (total in 9 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping
D. A. Safonova, A. N. Vinichenkoab, N. I. Kargina, I. S. Vasil'evskiia a National Engineering Physics Institute "MEPhI", Moscow
b Immanuel Kant Baltic Federal University, Kaliningrad
Abstract:
The influence of the concentration of $\delta$ doping with Si on the electron transport properties of Al$_{0.25}$Ga$_{0.75}$As/In$_{0.2}$Ga$_{0.8}$As/GaAs pseudomorphic quantum wells is studied in a broad temperature range of 4.2–300 K. A decrease in the doping efficiency at an electron concentration of $>$ 1.8 $\times$ 10$^{12}$ cm$^{-2}$ is found. This is caused by the effects of incomplete impurity ionization, which is also reflected on the temperature dependence of the electron concentration. A nonmonotonic variation in the electron mobility with increasing donor concentration, which is not associated with filling of the upper subband of size quantization, is observed. An increase in the mobility is associated with a rise in the Fermi momentum and screening, while its subsequent drop with increasing Si concentration is caused by the tunnel degradation of the spacer layer with a decrease in the conduction-band potential in the region of the $\delta$-Si layer.
Received: 20.04.2017 Accepted: 15.05.2017
Citation:
D. A. Safonov, A. N. Vinichenko, N. I. Kargin, I. S. Vasil'evskii, “Electron transport in phemt AlGaAs/InGaAs/GaAs ÐÍÅÌÒ quantum wells at different temperatures: influence of one-side $\delta$-Si doping”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 201–206; Semiconductors, 52:2 (2018), 189–194
Linking options:
https://www.mathnet.ru/eng/phts5917 https://www.mathnet.ru/eng/phts/v52/i2/p201
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