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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
V. V. Kaminskii, S. M. Soloviev, N. N. Stepanov, G. A. Kamenskaja, G. D. Khavrov, S. E. Alexandrov, “Thin-film baroresistors based on Sm$_{1-x}$Gd$_{x}$S solid solutions”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 28–31 ; Semiconductors, 55:1 (2021), 25–27 |
2. |
V. V. Chistyakov, S. A. Kazakov, M. A. Grevtsev, S. M. Soloviev, “Nonlinear regression algorithm for processing signals from semiconductor chemical sensors to provide selective detection of impurities in artificial air”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 15–18 ; Tech. Phys. Lett., 47:3 (2021), 266–270 |
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2020 |
3. |
V. V. Kaminskii, S. M. Soloviev, N. M. Sudak, M. I. Zaldastanishvili, “Detection of the thermovoltaic effect in a heterostructure based on lead telluride”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 52–54 ; Tech. Phys. Lett., 46:1 (2020), 47–49 |
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2019 |
4. |
V. V. Kaminskii, A. O. Lebedev, S. M. Soloviev, N. V. Sharenkova, “SmS/SiC heterostructure and its associated thermovoltaic effect”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 212–213 ; Tech. Phys., 64:2 (2019), 181–182 |
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5. |
Yu. V. Ulashkevich, V. V. Kaminskii, S. M. Soloviev, N. V. Sharenkova, “Spectra of SmS films in the far- and mid-infrared regions”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1544–1546 ; Semiconductors, 53:11 (2019), 1511–1513 |
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2018 |
6. |
V. V. Kaminskii, S. M. Soloviev, G. D. Khavrov, N. V. Sharenkova, “Mechanism of the semiconductor–metal phase transition in Sm$_{1-x}$ Gd$_{x}$S thin films”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 45–47 ; Semiconductors, 52:1 (2018), 41–43 |
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7. |
V. V. Kaminskii, S. M. Soloviev, N. V. Sharenkova, S. Hirai, Y. Kubota, “The thermovoltaic effect in cerium sesquisulphide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 85–89 ; Tech. Phys. Lett., 44:12 (2018), 1087–1088 |
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2017 |
8. |
V. V. Kaminskii, S. M. Solov'ev, G. D. Khavrov, N. V. Sharenkova, Shinji Hirai, “Structural features of Sm$_{1-x}$Eu$_{x}$S thin polycrystalline films”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 860 ; Semiconductors, 51:6 (2017), 828–830 |
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Organisations |
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