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This article is cited in 3 scientific papers (total in 3 papers)
Surface, interfaces, thin films
Mechanism of the semiconductor–metal phase transition in Sm$_{1-x}$ Gd$_{x}$S thin films
V. V. Kaminskii, S. M. Soloviev, G. D. Khavrov, N. V. Sharenkova Ioffe Institute, St. Petersburg
Abstract:
The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm$_{1-x}$ Gd$_{x}$S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of $x$ = 0.12.
Received: 11.04.2017 Accepted: 19.04.2017
Citation:
V. V. Kaminskii, S. M. Soloviev, G. D. Khavrov, N. V. Sharenkova, “Mechanism of the semiconductor–metal phase transition in Sm$_{1-x}$ Gd$_{x}$S thin films”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 45–47; Semiconductors, 52:1 (2018), 41–43
Linking options:
https://www.mathnet.ru/eng/phts5939 https://www.mathnet.ru/eng/phts/v52/i1/p45
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Abstract page: | 38 | Full-text PDF : | 10 |
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