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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Calculating silicon-amorphization doses under medium-energy light-ion irradiation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 771–777   ; Semiconductors, 54:8 (2020), 916–922 |
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E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 24–27 ; Tech. Phys. Lett., 46:1 (2020), 19–22 |
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2018 |
| 3. |
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 967–972 ; Semiconductors, 52:9 (2018), 1091–1096 |
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1986 |
| 4. |
V. A. Panteleev, M. I. Vasilevskii, G. M. Golemshtok, V. I. Okulich, “Defect interaction in the phosphorus diffusion in silicon”, Fizika Tverdogo Tela, 28:10 (1986), 3226–3228 |
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1985 |
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A. S. Vasin, V. I. Okulich, V. A. Panteleev, D. I. Tetelbaum, “Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing”, Fizika Tverdogo Tela, 27:1 (1985), 274–277 |
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| Organisations |
- Gor'kii Research Institute of Physics and Technology
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