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This article is cited in 2 scientific papers (total in 2 papers)
Spectroscopy, interaction with radiation
Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions
E. V. Okulicha, V. I. Okulichb, D. I. Tetelbauma a Lobachevsky State University of Nizhny Novgorod
b Nizhny Novgorod Institute of Management – Branch of the Russian Presidential Academy of National Economy and Public Administration, Nizhny Novgorod, Russia
Abstract:
Numerical calculations of the accumulation kinetics of point defects–vacancies and divacancies–under the irradiation of Si with ions having masses of $M_1\le$ 31 amu and energies of $E\le$ 100 keV under various irradiation conditions are performed. The previously proposed diffusion-coagulation model is used without application of the “weak diffusion” approximation, which was performed during its analytical implementation. The main peculiarities of the dependences of the concentrations of vacancies and divacancies on the dose, ion-current density, and temperature under irradiation are analyzed. A physical interpretation of these results is given. The developed computing complex is rather flexible and makes it possible to analyze the influence of model input parameters by means of their variation and include additional processes into consideration if necessary.
Keywords:
Aggregation Kinetics, Light Ions, Vacancy Point Defects, Divacancy Concentration, Intrinsic Interstitial Atoms (IIAs).
Received: 14.12.2017 Accepted: 25.12.2017
Citation:
E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 967–972; Semiconductors, 52:9 (2018), 1091–1096
Linking options:
https://www.mathnet.ru/eng/phts5724 https://www.mathnet.ru/eng/phts/v52/i9/p967
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