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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 46, Issue 1, Pages 24–27
DOI: https://doi.org/10.21883/PJTF.2020.01.48859.18003 (Mi pjtf5223) 		 
This article is cited in 9 scientific papers (total in 9 papers)

Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors

E. V. Okulich, V. I. Okulich, D. I. Tetelbaum

Lobachevsky State University of Nizhny Novgorod
Full-text PDF (183 kB) Citations (9)
DOI: https://doi.org/10.21883/PJTF.2020.01.48859.18003
Abstract: The improvement of the parameters of the SiO$_2$-based memristor is found when creating displacement cascades in the near-surface layer of a silicon dioxide film by irradiation with Xe$^+$ ions. Molecular dynamic modeling of the structure of amorphous SiO$_2$ enriched with oxygen vacancies has shown the possibility of nucleation of silicon nanoclusters, which can play a significant role in the formation and evolution of current conducting paths (filaments) and thereby affect the parameters of the memristor.
Keywords: memristive structures, silicon dioxide, filament, ion irradiation, nanoclusters, molecular dynamic modeling.
Funding agency Grant number
Russian Foundation for Basic Research 18-37-00456
This work was supported by the Russian Foundation for Basic Research, project no. 18-37-00456.
Received: 29.07.2019
Revised: 03.10.2019
Accepted: 03.10.2019
English version:
Technical Physics Letters, 2020, Volume 46, Issue 1, Pages 19–22
DOI: https://doi.org/10.1134/S1063785020010083
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Okulich, V. I. Okulich, D. I. Tetelbaum, “Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 24–27; Tech. Phys. Lett., 46:1 (2020), 19–22
Citation in format AMSBIB
\Bibitem{OkuOkuTet20}
\by E.~V.~Okulich, V.~I.~Okulich, D.~I.~Tetelbaum
\paper Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 1
\pages 24--27
\mathnet{http://mi.mathnet.ru/pjtf5223}
\crossref{https://doi.org/10.21883/PJTF.2020.01.48859.18003}
\elib{https://elibrary.ru/item.asp?id=42776847}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 1
\pages 19--22
\crossref{https://doi.org/10.1134/S1063785020010083}
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    • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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