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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
E. V. Kalinina, A. A. Katashev, G. N. Violina, A. M. Strel'chuk, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural, electrical, and optical properties of 4$H$-SiC for ultraviolet photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1368–1373 ; Semiconductors, 54:12 (2020), 1628–1633 |
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2. |
E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, “Structural and optical characteristics of 4$H$-SiC UV detectors irradiated with argon ions”, Fizika i Tekhnika Poluprovodnikov, 54:11 (2020), 1244–1248 ; Semiconductors, 54:11 (2020), 1478–1482 |
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3. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodskii, M. Z. Shvarts, S. A. Levina, A. V. Nikolaev, “Effect of temperature on the characteristics of 4$H$-SiC UV photodetectors”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 195–201 ; Semiconductors, 54:2 (2020), 246–252 |
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2019 |
4. |
E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina, E. V. Ivanova, V. V. Zabrodskii, “Proton irradiation of 4$H$-SiC photodetectors with Schottky barriers”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 856–861 ; Semiconductors, 53:6 (2019), 844–849 |
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2017 |
5. |
A. S. Grashchenko, N. A. Feoktistov, A. V. Osipov, E. V. Kalinina, S. A. Kukushkin, “Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 651–658 ; Semiconductors, 51:5 (2017), 621–627 |
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2016 |
6. |
E. V. Kalinina, G. N. Violina, V. P. Belik, A. V. Nikolaev, V. V. Zabrodskii, “Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 73–78 ; Tech. Phys. Lett., 42:10 (2016), 1057–1059 |
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1985 |
7. |
E. V. Kalinina, Yu. V. Koval'chuk, G. V. Prishepa, O. V. Smol'skii, “Ultrashort laser-pulse effect on electrophysical properties of silicon-carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 669–671 |
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1984 |
8. |
V. G. Oding, Yu. A. Vodakov, E. V. Kalinina, E. N. Mokhov, K. D. Demakov, V. G. Stolyarova, G. F. Goluyanov, “Cathodoluminescence of SiC Ion-Doped by Aland Ar”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 700–703 |
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