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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Lozhkina, E. V. Astrova, A. I. Lihachev, A. V. Parfeneva, A. M. Rumyantsev, A. N. Smirnov, V. P. Ulin, “Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1381–1392   ; Tech. Phys., 66:11 (2021), 1228–1240  |
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| 2. |
D. A. Lozhkina, E. V. Astrova, R. V. Sokolov, D. A. Kirilenko, A. A. Levin, A. V. Parfeneva, V. P. Ulin, “Formation of silicon nanoclusters upon disproportionation of silicon monoxide”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 373–387 ; Semiconductors, 55:4 (2021), 423–437 |
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2020 |
| 3. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova, “Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765 ; Semiconductors, 54:8 (2020), 900–911 |
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| 4. |
D. A. Lozhkina, A. M. Rumyantsev, E. V. Astrova, “Impedance spectroscopy of porous silicon and silicon-carbon anodes produced by sintering”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 310–318 ; Semiconductors, 54:3 (2020), 383–391 |
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| 5. |
E. V. Astrova, A. V. Parfeneva, A. M. Rumyantsev, V. P. Ulin, M. V. Baidakova, V. N. Nevedomskiy, A. V. Nashchekin, “The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 14–18 ; Tech. Phys. Lett., 46:2 (2020), 114–117 |
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2019 |
| 6. |
G. V. Li, E. V. Astrova, N. E. Preobrazhenskii, A. M. Rumyantsev, S. I. Pavlov, E. V. Beregulin, “Negative electrodes for lithium-ion batteries obtained by photoanodization of solar-grade silicon”, Zhurnal Tekhnicheskoi Fiziki, 89:5 (2019), 711–716 ; Tech. Phys., 64:5 (2019), 660–665 |
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| 7. |
E. V. Astrova, V. B. Voronkov, A. V. Nashchekin, A. V. Parfeneva, D. A. Lozhkina, M. V. Tomkovich, Yu. A. Kukushkina, “Formation of porous silicon by nanopowder sintering”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 540–549 ; Semiconductors, 53:4 (2019), 530–539 |
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| 8. |
G. V. Li, E. V. Astrova, A. I. Lihachev, “Photoanodization of $n$-Si in the presence of hydrogen peroxide: voltage dependence”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 119–131 ; Semiconductors, 53:1 (2019), 114–126 |
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| 9. |
G. V. Li, E. V. Astrova, A. M. Rumyantsev, “Electrochemical amorphization as a method to increase the rate capability of crystalline silicon anodes for lithium-ion batteries”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 16–20 ; Tech. Phys. Lett., 45:11 (2019), 1131–1135 |
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| 10. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, V. B. Voronkov, “Fluorocarbon carbonization of nanocrystalline silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 29–32 ; Tech. Phys. Lett., 45:7 (2019), 664–667 |
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2018 |
| 11. |
G. V. Li, E. V. Astrova, A. I. Lihachev, “Influence of hydrogen peroxide on the photoanodization of $n$-Si in the breakdown mode”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1614–1624 ; Semiconductors, 52:13 (2018), 1721–1731 |
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| 12. |
E. V. Astrova, N. E. Preobrazhenskii, G. V. Li, S. I. Pavlov, “Formation of macropores in $n$-Si upon anodization in an organic electrolyte”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 414–430 ; Semiconductors, 52:3 (2018), 394–410 |
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2017 |
| 13. |
E. V. Astrova, N. E. Preobrazhenskii, S. I. Pavlov, V. B. Voronkov, “Characteristic properties of macroporous silicon sintering in an argon atmosphere”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1213–1222 ; Semiconductors, 51:9 (2017), 1164–1173 |
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| 14. |
E. V. Astrova, N. E. Preobrazhenskii, S. I. Pavlov, V. B. Voronkov, “High-temperature annealing of macroporous silicon in an inert-gas flow”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1202–1212 ; Semiconductors, 51:9 (2017), 1153–1163 |
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| 15. |
N. E. Preobrazhenskii, E. V. Astrova, S. I. Pavlov, V. B. Voronkov, A. M. Rumyantsev, V. V. Zhdanov, “Anodes for Li-ion batteries based on $p$-Si with self-organized macropores”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 79–88 ; Semiconductors, 51:1 (2017), 78–87 |
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2016 |
| 16. |
E. V. Astrova, A. M. Rumyantsev, G. V. Li, A. V. Nashchekin, D. Yu. Kazantsev, B. Ya. Ber, V. V. Zhdanov, “Electrochemical lithiation of silicon with varied crystallographic orientation”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 979–986 ; Semiconductors, 50:7 (2016), 963–969 |
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| 17. |
E. V. Astrova, G. V. Li, A. M. Rumyantsev, V. V. Zhdanov, “Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 279–286 ; Semiconductors, 50:2 (2016), 276–283 |
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1992 |
| 18. |
E. V. Astrova, V. B. Voronkov, Y. N. Daluda, V. A. Kozlov, A. A. Lebedev, “NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER
SOLID-PHASE DIRECT SILICON BONDING”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992), 51–56 |
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1991 |
| 19. |
E. V. Astrova, I. A. Bobrovnikova, M. D. Vilisova, O. M. Ivleva, L. G. Lavrenteva, A. A. Lebedev, I. V. Teterkina, V. V. Chaldyshev, N. A. Chernov, Yu. V. Shmartsev, “Влияние изовалентного легирования индием на свойства эпитаксиальных
слоев арсенида галлия, выращенного из газовой фазы”, Fizika i Tekhnika Poluprovodnikov, 25:5 (1991), 898–903 |
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1990 |
| 20. |
E. V. Astrova, A. A. Lebedev, “Новый способ обработки спектров DLTS”, Fizika i Tekhnika Poluprovodnikov, 24:3 (1990), 549–552 |
| 21. |
E. V. Astrova, V. B. Voronkov, I. B. Grekhov, V. A. Kozlov, A. A. Lebedev, “HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 1–4 |
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1988 |
| 22. |
E. V. Astrova, V. M. Volle, V. B. Voronkov, I. V. Grekhov, V. A. Kozlov, A. A. Lebedev, “SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE
HIGHER-THAN-20-KV”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 972–975 |
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1986 |
| 23. |
E. V. Astrova, V. M. Volle, V. B. Voronkov, V. A. Kozlov, A. A. Lebedev, “Effect of Deep Levels on Breakdown Voltage of Diodes”, Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 2122–2125 |
| 24. |
E. V. Astrova, A. A. Lebedev, “Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers”, Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 683–686 |
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1985 |
| 25. |
E. V. Astrova, V. B. Voronkov, A. A. Lebedev, B. M. Urunbaev, “Study
of Thermal Defects in High-Resistance
$n$-Type Si”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1709–1711 |
| 26. |
E. V. Astrova, A. A. Lebedev, A. A. Lebedev, “Effect of Series Resistance
of a Diode on Unsteady Capacitance
Measurements of Deep-Level Parameters”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1382–1385 |
| 27. |
E. V. Astrova, A. A. Lebedev, “Capacitance Measurements of Deep-Impurity Distribution Profile and
Surface Concentration in Thin Doped Layers”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1375–1381 |
| 28. |
E. V. Astrova, V. M. Gontar, A. A. Lebedev, “Capacitance and Photoelectric
Spectroscopy of Thallium
Levels in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:7 (1985), 1273–1276 |
| 29. |
E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno, “Photoconduction of Selenium-Doped Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 919–922 |
| 30. |
E. V. Astrova, A. A. Lebedev, N. A. Sultanov, V. Ekke, “Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)”, Fizika i Tekhnika Poluprovodnikov, 19:5 (1985), 917–919 |
| 31. |
E. V. Astrova, I. B. Bolshakov, A. A. Lebedev, O. A. Mikhno, “Energy Levels of Selenium in Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 597–600 |
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