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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
Formation of porous silicon by nanopowder sintering
E. V. Astrova, V. B. Voronkov, A. V. Nashchekin, A. V. Parfeneva, D. A. Lozhkina, M. V. Tomkovich, Yu. A. Kukushkina Ioffe Institute, St. Petersburg
Abstract:
The technique of the electrochemical and photoelectrochemical etching of single-crystal silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and costly. An alternative method for forming bulk macroporous silicon is the high-temperature sintering of Si powder. The process of nanopowder sintering preliminarily subjected to dry cold compression (without binding additives) is investigated. The properties of the sintered material, including its microstructure, density, and electrical conductivity, are studied at different annealing temperature and time. Techniques for changing the porosity of the sintered samples and for determining of the interior surface area are discussed.
Received: 12.11.2018 Revised: 22.11.2018 Accepted: 26.11.2018
Citation:
E. V. Astrova, V. B. Voronkov, A. V. Nashchekin, A. V. Parfeneva, D. A. Lozhkina, M. V. Tomkovich, Yu. A. Kukushkina, “Formation of porous silicon by nanopowder sintering”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 540–549; Semiconductors, 53:4 (2019), 530–539
Linking options:
https://www.mathnet.ru/eng/phts5549 https://www.mathnet.ru/eng/phts/v53/i4/p540
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