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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
A. E. Belyaev, N. S. Boltovets, V. P. Klad'ko, N. V. Safryuk-Romanenko, A. I. Lubchenko, V. N. Sheremet, V. V. Shynkarenko, A. S. Slepova, V. A. Pilipenko, T. V. Petlitskaya, A. S. Pilipchuk, R. V. Konakova, A. V. Sachenko, “Features of the temperature dependence of the specific contact resistance of Au–Ti–Pd–$n^{+}$–$n$-Si diffusion silicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 485–492   ; Semiconductors, 53:4 (2019), 469–476 |
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2018 |
| 2. |
A. V. Sachenko, A. E. Belyaev, R. V. Konakova, “On a new mechanism for the realization of ohmic contacts”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 138–142 ; Semiconductors, 52:1 (2018), 131–135 |
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| 3. |
A. V. Sachenko, V. P. Kostylyov, A. V. Bobyl', V. N. Vlasyuk, I. O. Sokolovskyi, G. A. Konoplev, E. I. Terukov, M. Z. Shvarts, M. A. Evstigneev, “The effect of base thickness on photoconversion efficiency in textured silicon-based solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018), 40–49 ; Tech. Phys. Lett., 44:10 (2018), 873–876 |
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2017 |
| 4. |
V. N. Verbitskii, I. E. Panaiotti, S. E. Nikitin, A. V. Bobyl', G. G. Shelopin, D. A. Andronikov, A. S. Abramov, A. V. Sachenko, E. I. Terukov, “Electroluminescent study of the efficiency of silicon heterostructural solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017), 3–11 ; Tech. Phys. Lett., 43:9 (2017), 779–782 |
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| 5. |
A. V. Sachenko, V. P. Kostylyov, A. V. Bobyl', V. M. Vlasyuk, I. O. Sokolovskyi, E. I. Terukov, M. A. Evstigneev, “Peculiarities of photoconversion efficiency modeling in perovskite solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017), 88–96 ; Tech. Phys. Lett., 43:7 (2017), 678–680 |
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| 6. |
A. V. Sachenko, V. P. Kostylyov, I. O. Sokolovskyi, A. V. Bobyl', V. N. Verbitskii, E. I. Terukov, M. Z. Shvarts, “Specific features of current flow in $\alpha$-Si : H/Sii heterojunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017), 29–38 ; Tech. Phys. Lett., 43:2 (2017), 152–155 |
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2016 |
| 7. |
A. V. Sachenko, A. E. Belyaev, R. V. Konakova, “On the ohmicity of Schottky contacts”, Fizika i Tekhnika Poluprovodnikov, 50:6 (2016), 777–784 ; Semiconductors, 50:6 (2016), 761–768 |
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| 8. |
A. V. Sachenko, A. I. Skrebtii, R. M. Korkishko, V. P. Kostylyov, N. R. Kulish, I. O. Sokolovskyi, “Simulation of the real efficiencies of high-efficiency silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 531–537 ; Semiconductors, 50:4 (2016), 523–529 |
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| 9. |
A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, I. O. Sokolovskyi, A. S. Abramov, A. V. Bobyl', I. E. Panaiotti, E. I. Terukov, “Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 259–263 ; Semiconductors, 50:2 (2016), 257–260 |
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| 10. |
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, R. V. Konakova, S. A. Vitusevich, S. V. Novitskii, V. N. Sheremet, A. S. Pilipchuk, “The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 82–87 ; Tech. Phys. Lett., 42:6 (2016), 649–651 |
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| 11. |
A. V. Sachenko, Yu. V. Kryuchenko, V. P. Kostylyov, R. M. Korkishko, I. O. Sokolovskyi, A. S. Abramov, S. N. Abolmasov, D. A. Andronikov, A. V. Bobyl', I. E. Panaiotti, E. I. Terukov, A. S. Titov, M. Z. Shvarts, “The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 70–76 ; Tech. Phys. Lett., 42:3 (2016), 313–316 |
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1992 |
| 12. |
А. M. Evstigneev, A. V. Sachenko, “Effect of friedel oscillations on the capacity of a double electric layer”, Fizika Tverdogo Tela, 34:7 (1992), 2287–2290 |
| 13. |
A. Ya. Bul, A. T. Dideikin, S. K. Boitsov, Yu. S. Zinchik, A. V. Sachenko, “Эффект усиления фототока в структурах
полупроводник$-$туннельно-прозрачный диэлектрик$-$полупроводник”, Fizika i Tekhnika Poluprovodnikov, 26:2 (1992), 295–304 |
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1988 |
| 14. |
V. G. Popov, A. V. Sachenko, Yu. V. Kolomzarov, R. P. Komirenko, V. A. Skryshevsky, “К определению характерных длин собирания фототока
в поверхностно-барьерных структурах на основе аморфного гидрированного
кремния”, Fizika i Tekhnika Poluprovodnikov, 22:10 (1988), 1867–1870 |
| 15. |
N. A. Prima, A. V. Sachenko, “Поверхностная релаксация энергии и отрицательная дифференциальная
проводимость тонких образцов”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 522–524 |
| 16. |
A. Ya. Vul', A. T. Dideikin, A. V. Sachenko, A. I. Shkrebtii, “VOLT-AMPERE CHARACTERISTICS OF MTDS STRUCTURES IN THE MODE OF STATIONARY
AVALANCHE BREAKDOWN”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1729–1732 |
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1986 |
| 17. |
A. Ya. Vul', A. T. Dideikin, Yu. S. Zinchik, K. V. Sanin, A. V. Sachenko, “Kinetics of Photoresponse and Mechanism of Current Flow in Silicon Structures of Semiconductor–Thin Dielectric–Semiconductor”, Fizika i Tekhnika Poluprovodnikov, 20:8 (1986), 1444–1450 |
| 18. |
L. V. Belyakov, D. N. Goryachev, A. V. Sachenko, O. M. Sreseli, “Anomalous Photoeffect on the Cuprous Oxide – Electrolyte Interface”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 876–880 |
| 19. |
A. V. Sachenko, B. A. Novominsky, V. Ya. Aivazov, A. S. Kalshabekov, “Photomagnetic Effect in Si$-$SiO$_{2}$ Structures”, Fizika i Tekhnika Poluprovodnikov, 20:2 (1986), 257–262 |
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1985 |
| 20. |
A. V. Sachenko, “Physical Limitations on the Efficiency of Phototransformation
in Surface-Barrier Structure Based on Amorphous Silicon”, Fizika i Tekhnika Poluprovodnikov, 19:8 (1985), 1468–1472 |
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1983 |
| 21. |
A. V. Sachenko, “Спектральные зависимости фототока в поверхностно-барьерных
структурах на основе аморфного гидрогенизированного
кремния. Теоретические соотношения”, Fizika i Tekhnika Poluprovodnikov, 17:10 (1983), 1782–1786 |
| 22. |
A. Ya. Vul', A. T. Dideikin, Yu. S. Zinchik, K. V. Sanin, A. V. Sachenko, “Кинетика фотоответа туннельных МДП структур”, Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1471–1477 |
| 23. |
A. Ya. Vul', A. V. Sachenko, “Фотоэлектрические свойства структур
металл–диэлектрик–полупроводник
с туннельно-прозрачным слоем диэлектрика”, Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1361–1376 |
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