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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 531–537
(Mi phts6497)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Simulation of the real efficiencies of high-efficiency silicon solar cells
A. V. Sachenkoa, A. I. Skrebtiib, R. M. Korkishkoa, V. P. Kostylyova, N. R. Kulisha, I. O. Sokolovskyia a Institute of Semiconductor Physics NAS, Kiev
b Ontario Tech University, Oshawa, Canada
Abstract:
The temperature dependences of the efficiency $\eta$ of high-efficiency solar cells based on silicon are calculated. It is shown that the temperature coefficient of decreasing $\eta$ with increasing temperature decreases as the surface recombination rate decreases. The photoconversion efficiency of high-efficiency silicon-based solar cells operating under natural (field) conditions is simulated. Their operating temperature is determined self-consistently by simultaneously solving the photocurrent, photovoltage, and energy-balance equations. Radiative and convective cooling mechanisms are taken into account. It is shown that the operating temperature of solar cells is higher than the ambient temperature even at very high convection coefficients ($\sim$300 W/m$^2$ K). Accordingly, the photoconversion efficiency in this case is lower than when the temperature of the solar cells is equal to the ambient temperature. The calculated dependences for the open-circuit voltage and the photoconversion efficiency of high-quality silicon solar cells under concentrated illumination are discussed taking into account the actual temperature of the solar cells.
Keywords:
Silicon Solar Cell, Convection Coefficient, Photoconversion Efficiency, Real Efficiency, Effective Surface Recombination Velocity.
Received: 16.04.2015 Accepted: 12.10.2015
Citation:
A. V. Sachenko, A. I. Skrebtii, R. M. Korkishko, V. P. Kostylyov, N. R. Kulish, I. O. Sokolovskyi, “Simulation of the real efficiencies of high-efficiency silicon solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 531–537; Semiconductors, 50:4 (2016), 523–529
Linking options:
https://www.mathnet.ru/eng/phts6497 https://www.mathnet.ru/eng/phts/v50/i4/p531
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