|
|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
| 1. |
A. N. Nechai, S. A. Garakhin, A. Ya. Lopatin, V. N. Polkovnikov, D. G. Reunov, N. N. Salashchenko, M. N. Toropov, N. I. Chkhalo, N. N. Tsybin, “Lasing efficiency of krypton ions in the (8–14)-nm band upon pulsed laser excitation”, Kvantovaya Elektronika, 50:4 (2020), 408–413   [Quantum Electron., 50:4 (2020), 408–413   ] |
7
|
|
2019 |
| 2. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163 ; Semiconductors, 53:8 (2019), 1138–1142 |
6
|
| 3. |
N. V. Baidus, V. A. Kukushkin, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 345–350 ; Semiconductors, 53:3 (2019), 326–331 |
|
2018 |
| 4. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
3
|
|
| Organisations |
|
| |
|
|
Contact us: