|
|
Publications in Math-Net.Ru |
Citations |
|
2020 |
1. |
E. A. Panyutin, Sh. Sh. Sharofidinov, T. A. Orlova, S. A. Snytkina, A. A. Lebedev, “Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices”, Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020), 450–455 ; Tech. Phys., 65:3 (2020), 428–433 |
4
|
2. |
G. A. Gavrilov, K. L. Muratikov, E. A. Panyutin, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Specific features of the pyroelectric effect in epitaxial aluminum nitride layers obtained on Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020), 20–23 ; Tech. Phys. Lett., 46:1 (2020), 16–18 |
2
|
|
2019 |
3. |
E. A. Panyutin, M. L. Shmatov, “Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors”, Kvantovaya Elektronika, 49:11 (2019), 1078–1082 [Quantum Electron., 49:11 (2019), 1078–1082 ] |
1
|
|
2018 |
4. |
G. A. Gavrilov, A. F. Kapralov, K. L. Muratikov, E. A. Panyutin, A. V. Sotnikov, G. Yu. Sotnikova, Sh. Sh. Sharofidinov, “Studying the pyroelectric effect in AlN epilayers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 11–19 ; Tech. Phys. Lett., 44:8 (2018), 709–712 |
11
|
|
Organisations |
|
|
|
|