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This article is cited in 1 scientific paper (total in 1 paper)
Laser applications and other topics in quantum electronics
Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors
E. A. Panyutin, M. L. Shmatov Ioffe Institute, St. Petersburg
Abstract:
The use of transparent Al2O3 /GaN/AlN/GaN structures as pyrometric sensors for measuring the parameters of high-intensity laser pulses is proposed. The peculiarities of the employment of such sensors in laser fusion facilities are analysed. Post-pulse distributions of the absorbed energy density are obtained for various parameters of both GaN layers. The local maxima of these distributions are minimised by varying the ratio of donor concentration and the ratio of their thicknesses under the condition of invariance of the total absorbed energy. The optimal structure configuration is established in terms of reducing the possible negative effect of laser impact on the pyroelectric coefficient stability.
Keywords:
laser thermonuclear fusion, aluminium nitride, pyroelectric effect.
Received: 25.11.2018 Revised: 30.07.2019
Citation:
E. A. Panyutin, M. L. Shmatov, “Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors”, Kvantovaya Elektronika, 49:11 (2019), 1078–1082 [Quantum Electron., 49:11 (2019), 1078–1082]
Linking options:
https://www.mathnet.ru/eng/qe17137 https://www.mathnet.ru/eng/qe/v49/i11/p1078
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Abstract page: | 126 | Full-text PDF : | 34 | References: | 23 | First page: | 8 |
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