|
|
|
Publications in Math-Net.Ru |
Citations |
|
2019 |
| 1. |
G. S. Patrin, I. À. Turpanov, V. I. Yushkov, A. V. Kobyakov, K. G. Patrin, G. Yu. Yurkin, Ya. A. Zhivaya, “Effect of the semiconductor spacer on positive exchange bias in the CoNi/Si/FeNi three-layer structure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:5 (2019), 325–330   ; JETP Letters, 109:5 (2019), 320–324   |
3
|
| 2. |
A. V. Kobyakov, I. À. Turpanov, G. S. Patrin, R. Yu. Rudenko, V. I. Yushkov, N. N. Kosyrev, “Structural and magnetic properties of the Al$_{2}$O$_{3}$/Ge-$p$/Al$_{2}$O$_{3}$/Co system”, Zhurnal Tekhnicheskoi Fiziki, 89:2 (2019), 268–273 ; Tech. Phys., 64:2 (2019), 236–241 |
1
|
|
| Organisations |
|
|
Contact us: