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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2019, Volume 109, Issue 5, Pages 325–330
DOI: https://doi.org/10.1134/S0370274X19050084 (Mi jetpl5841) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Effect of the semiconductor spacer on positive exchange bias in the CoNi/Si/FeNi three-layer structure

G. S. Patrinab, I. А. Turpanova, V. I. Yushkovba, A. V. Kobyakovab, K. G. Patrina, G. Yu. Yurkina, Ya. A. Zhivayaa

a Siberian Federal University, Krasnoyarsk, Russia
b Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russia
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DOI: https://doi.org/10.1134/S0370274X19050084
Abstract: Films consisting of a hard magnetic ferromagnet CoNi and a soft magnetic ferromagnet FeNi interacting through a nonmagnetic Si semiconductor spacer are experimentally studied. The temperature and field dependences of the magnetic properties of film structures with different silicon thicknesses are examined. It is found that the multilayer structure has the properties inherent in magnetic springs and exhibits positive exchange bias as a function of the silicon thickness.
Funding agency Grant number
Russian Foundation for Basic Research 18-02-00161_а
Received: 21.09.2018
Revised: 14.12.2018
Accepted: 25.12.2018
English version:
Journal of Experimental and Theoretical Physics Letters, 2019, Volume 109, Issue 5, Pages 320–324
DOI: https://doi.org/10.1134/S0021364019050126
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Patrin, I. А. Turpanov, V. I. Yushkov, A. V. Kobyakov, K. G. Patrin, G. Yu. Yurkin, Ya. A. Zhivaya, “Effect of the semiconductor spacer on positive exchange bias in the CoNi/Si/FeNi three-layer structure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 109:5 (2019), 325–330; JETP Letters, 109:5 (2019), 320–324
Citation in format AMSBIB
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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