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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin, “The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors”, Kvantovaya Elektronika, 53:5 (2023), 401–405  [Bull. Lebedev Physics Institute, 50:suppl. 9 (2023), S1015–S1021] |
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2022 |
| 2. |
R. Kh. Zhukavin, P. A. Bushuikin, V. D. Kukotenko, Yu. Yu. Choporova, N. Deßmann, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Gerasimov, B. A. Knyazev, N. V. Abrosimov, V. N. Shastin, “Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022), 139–145 ; JETP Letters, 116:3 (2022), 137–143 |
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2021 |
| 3. |
A. A. Revin, A. M. Mikhaylova, A. A. Konakov, V. V. Tsyplenkov, V. N. Shastin, “Quantitative analysis of valley–orbit coupling in germanium doped with group-V donors”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 901–907  ; Semiconductors, 55:12 (2021), 879–884 |
| 4. |
V. V. Tsyplenkov, V. N. Shastin, “Intervalley relaxation processes of shallow donor states in germanium”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 807–812 ; Semiconductors, 55:10 (2021), 799–803 |
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2020 |
| 5. |
K. A. Kovalevsky, Yu. Yu. Choporova, R. Kh. Zhukavin, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. V. Tsyplenkov, V. D. Kukotenko, B. A. Knyazev, V. N. Shastin, “Relaxation of the excited states of arsenic in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1145–1149 ; Semiconductors, 54:10 (2020), 1347–1351 |
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| 6. |
V. V. Tsyplenkov, V. N. Shastin, “Influence of uniaxial stress along [110] direction on relaxation of arsenic shallow donor states in germanium”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 918–921 ; Semiconductors, 54:9 (2020), 1108–1111 |
| 7. |
R. Kh. Zhukavin, K. A. Kovalevsky, S. G. Pavlov, N. Deßmann, A. Pohl, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, H.-W. Hübers, V. N. Shastin, “Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 816–821 ; Semiconductors, 54:8 (2020), 969–974 |
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| 8. |
V. V. Tsyplenkov, V. N. Shastin, “On the possibility of Ramsey interference in germanium doped with shallow impurities”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 807–811 ; Semiconductors, 54:8 (2020), 961–965 |
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2019 |
| 9. |
R. Kh. Zhukavin, K. A. Kovalevskii, Yu. Yu. Choporova, V. V. Tsyplenkov, V. V. Gerasimov, P. A. Bushuikin, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, H.-W. Hübers, V. N. Shastin, “Relaxation times and population inversion of excited states of arsenic donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019), 677–682 ; JETP Letters, 110:10 (2019), 677–682   |
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| 10. |
V. V. Tsyplenkov, V. N. Shastin, “On the intracenter relaxation of shallow antimony donors in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1372–1377 ; Semiconductors, 53:10 (2019), 1334–1339 |
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| 11. |
V. N. Shastin, R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. V. Rumyantsev, D. V. Shengurov, S. G. Pavlov, V. B. Shuman, L. M. Portsel', A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, J. M. Klopf, H.-W. Hübers, “Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1263–1266 ; Semiconductors, 53:9 (2019), 1234–1237 |
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2018 |
| 12. |
V. V. Tsyplenkov, V. N. Shastin, “On the intracenter relaxation of shallow arsenic donors in stressed germanium. Population inversion under optical excitation”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1469–1476 ; Semiconductors, 52:12 (2018), 1573–1580 |
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2017 |
| 13. |
R. Kh. Zhukavin, K. A. Kovalevskii, S. M. Sergeev, Yu. Yu. Choporova, V. V. Gerasimov, V. V. Tsyplenkov, B. A. Knyazev, N. V. Abrosimov, S. G. Pavlov, V. N. Shastin, H. Schneider, N. Deßmann, O. A. Shevchenko, N. A. Vinokurov, G. N. Kulipanov, H.-W. Hübers, “Low-temperature intracenter relaxation times of shallow donors in germanium”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017), 555–560 ; JETP Letters, 106:9 (2017), 571–575 |
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2016 |
| 14. |
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H.-W. Hübers, N. V. Abrosimov, V. N. Shastin, “Polarization of the induced THz emission of donors in silicon”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1701–1705 ; Semiconductors, 50:12 (2016), 1673–1677 |
| 15. |
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483 ; Semiconductors, 50:11 (2016), 1458–1462 |
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2015 |
| 16. |
K. A. Kovalevsky, N. V. Abrosimov, R. Kh. Zhukavin, S. G. Pavlov, H. -W. Hübers, V. V. Tsyplenkov, V. N. Shastin, “Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon”, Kvantovaya Elektronika, 45:2 (2015), 113–120 [Quantum Electron., 45:2 (2015), 113–120 ] |
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