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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 10, Pages 1372–1377
DOI: https://doi.org/10.21883/FTP.2019.10.48292.38
(Mi phts5381)
 

This article is cited in 3 scientific papers (total in 3 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

On the intracenter relaxation of shallow antimony donors in strained germanium

V. V. Tsyplenkov, V. N. Shastin

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (155 kB) Citations (3)
Abstract: Long-wavelength acoustic phonon-assisted relaxation rates for the excited $1s(T)$, $2p_{0}$, $2s$, $3p_{0}$, $2p_\pm$, $4p_{0}$, and $3p_\pm$ states of antimony donors in a germanium crystal are calculated. The effect of the uniaxial compressive strain of a crystal along the [111] crystallographic direction on the relaxation rates is discussed. The results of calculations are compared with the measured times of relaxation of nonequilibrium states of donor centers by the pump-probe method. A comparison with the times obtained experimentally by the submillimeter photoconductivity method is made.
Keywords: germanium, shallow donors, relaxation, radiation of phonons.
Funding agency Grant number
Russian Science Foundation 19-72-20163
This study was carried out at the Institute for Physics of Microstructures, Russian Academy of Sciences and supported by the Russian Science Foundation, project no. 19-72-20163.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 10, Pages 1334–1339
DOI: https://doi.org/10.1134/S1063782619100221
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Tsyplenkov, V. N. Shastin, “On the intracenter relaxation of shallow antimony donors in strained germanium”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1372–1377; Semiconductors, 53:10 (2019), 1334–1339
Citation in format AMSBIB
\Bibitem{TsySha19}
\by V.~V.~Tsyplenkov, V.~N.~Shastin
\paper On the intracenter relaxation of shallow antimony donors in strained germanium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 10
\pages 1372--1377
\mathnet{http://mi.mathnet.ru/phts5381}
\crossref{https://doi.org/10.21883/FTP.2019.10.48292.38}
\elib{https://elibrary.ru/item.asp?id=41174862}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 10
\pages 1334--1339
\crossref{https://doi.org/10.1134/S1063782619100221}
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  • https://www.mathnet.ru/eng/phts/v53/i10/p1372
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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