|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757   ; Semiconductors, 55:9 (2021), 731–734 |
|
2018 |
| 2. |
A. P. Gorshkov, N. S. Volkova, D. A. Pavlov, Yu. V. Usov, L. A. Istomin, S. B. Levichev, “Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1421–1424 ; Semiconductors, 52:12 (2018), 1525–1528 |
| 3. |
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov, “Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655 ; Semiconductors, 52:6 (2018), 797–801 |
1
|
| 4. |
D. O. Filatov, I. N. Antonov, D. Yu. Sinutkin, D. A. Liskin, A. P. Gorshkov, O. N. Gorshkov, V. E. Kotomina, M. E. Shenina, S. V. Tikhov, I. S. Korotaeva, “Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470 ; Semiconductors, 52:4 (2018), 465–467 |
3
|
|
2017 |
| 5. |
A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450 ; Semiconductors, 51:11 (2017), 1395–1398 |
| 6. |
D. O. Filatov, I. A. Kazantseva, V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, A. P. Gorshkov, V. P. Mishkin, “Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 563–568 ; Semiconductors, 51:4 (2017), 536–541 |
1
|
|
2014 |
| 7. |
N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180 ; JETP Letters, 100:3 (2014), 156–161   |
11
|
|
| Organisations |
|
| |
|
|
Contact us: