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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 6, Pages 651–655
DOI: https://doi.org/10.21883/FTP.2018.06.45931.8670
(Mi phts5817)
 

This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers

M. M. Ivanovaa, A. N. Kachemtsev, A. N. Mikhaylova, D. O. Filatova, A. P. Gorshkova, N. S. Volkovaa, V. Yu. Chalkova, V. G. Shengurova

a Lobachevsky State University of Nizhny Novgorod
Full-text PDF (127 kB) Citations (1)
Abstract: A comparative study of the effect of pulsed $\gamma$-neutron irradiation on the photosensitivity spectra of Si $p$$n$ photodiodes with active layers based on self-assembled GeSi nanoisland arrays and Ge epitaxial layers is performed. The irradiation of photodiodes with GeSi nanoislands is found to not lead to photosensitivity degradation in the spectral region of interband optical absorption in nanoislands (wavelength range of 1.1–1.7 $\mu$m). At the same time, a steady decrease in the intrinsic photosensitivity of Si and the photosensitivity of photodiodes based on Ge epitaxial layers with an increase in irradiation dose is observed. This effect is attributed to the accumulation of radiation-induced defects in the Si matrix and deep in Ge epitaxial layers, respectively.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.7443.2017/БЧ
Received: 20.06.2017
Accepted: 28.06.2017
English version:
Semiconductors, 2018, Volume 52, Issue 6, Pages 797–801
DOI: https://doi.org/10.1134/S1063782618060064
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov, “Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655; Semiconductors, 52:6 (2018), 797–801
Citation in format AMSBIB
\Bibitem{IvaKacMik18}
\by M.~M.~Ivanova, A.~N.~Kachemtsev, A.~N.~Mikhaylov, D.~O.~Filatov, A.~P.~Gorshkov, N.~S.~Volkova, V.~Yu.~Chalkov, V.~G.~Shengurov
\paper Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 6
\pages 651--655
\mathnet{http://mi.mathnet.ru/phts5817}
\crossref{https://doi.org/10.21883/FTP.2018.06.45931.8670}
\elib{https://elibrary.ru/item.asp?id=37051684}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 6
\pages 797--801
\crossref{https://doi.org/10.1134/S1063782618060064}
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  • https://www.mathnet.ru/eng/phts/v52/i6/p651
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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