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Publications in Math-Net.Ru |
Citations |
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2018 |
| 1. |
A. P. Gorshkov, N. S. Volkova, D. A. Pavlov, Yu. V. Usov, L. A. Istomin, S. B. Levichev, “Relation between the electronic properties and structure of InAs/GaAs quantum dots grown by vapor-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1421–1424   ; Semiconductors, 52:12 (2018), 1525–1528 |
| 2. |
M. L. Orlov, N. S. Volkova, N. L. Ivina, L. K. Orlov, “Electric-field behavior of the resonance features of the tunneling photocurrent component in InAs(QD)/GaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1006–1014 ; Semiconductors, 52:9 (2018), 1129–1136 |
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| 3. |
M. M. Ivanova, A. N. Kachemtsev, A. N. Mikhaylov, D. O. Filatov, A. P. Gorshkov, N. S. Volkova, V. Yu. Chalkov, V. G. Shengurov, “Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 52:6 (2018), 651–655 ; Semiconductors, 52:6 (2018), 797–801 |
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2017 |
| 4. |
A. P. Gorshkov, N. S. Volkova, P. G. Voronin, A. V. Zdoroveyshchev, L. A. Istomin, D. A. Pavlov, Yu. V. Usov, S. B. Levichev, “Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1447–1450 ; Semiconductors, 51:11 (2017), 1395–1398 |
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2014 |
| 5. |
N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180 ; JETP Letters, 100:3 (2014), 156–161   |
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