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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Lozhkina, E. V. Astrova, A. I. Lihachev, A. V. Parfeneva, A. M. Rumyantsev, A. N. Smirnov, V. P. Ulin, “Silicon monoxide carbonized by fluorocarbon as a composite material for anodes of lithium-ion batteries”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1381–1392   ; Tech. Phys., 66:11 (2021), 1228–1240  |
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| 2. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Fraiman, Yu. M. Mikhailov, “Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions”, Tech. Phys., 66:2 (2021), 367 |
| 3. |
D. A. Lozhkina, E. V. Astrova, R. V. Sokolov, D. A. Kirilenko, A. A. Levin, A. V. Parfeneva, V. P. Ulin, “Formation of silicon nanoclusters upon disproportionation of silicon monoxide”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 373–387 ; Semiconductors, 55:4 (2021), 423–437 |
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2020 |
| 4. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, A. V. Nashchekin, V. N. Nevedomskiy, M. V. Baidakova, “Interaction of fluorocarbon with silicon monoxide and processes of SiC nanowire formation”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 753–765 ; Semiconductors, 54:8 (2020), 900–911 |
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| 5. |
E. V. Astrova, A. V. Parfeneva, A. M. Rumyantsev, V. P. Ulin, M. V. Baidakova, V. N. Nevedomskiy, A. V. Nashchekin, “The effect of thermal treatment on properties of composite silicon–carbon anodes for lithium-ion batteries”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:3 (2020), 14–18 ; Tech. Phys. Lett., 46:2 (2020), 114–117 |
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2019 |
| 6. |
G. G. Zegrya, V. P. Ulin, A. G. Zegrya, N. V. Ulin, V. M. Freiman, Yu. M. Mikhailov, “Effect of conductivity type and doping level of silicon crystals on the size of formed pore channels during anodic etching in hydrofluoric acid solutions”, Zhurnal Tekhnicheskoi Fiziki, 89:10 (2019), 1575–1584 ; Tech. Phys., 64:10 (2019), 1492–1500 |
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| 7. |
M. V. Baidakova, N. A. Germanov, S. N. Golyandin, M. E. Kompan, S. V. Mochalov, A. V. Nashchekin, V. N. Nevedomskiy, S. A. Pul'nev, M. K. Rabchinskii, V. P. Ulin, N. V. Ulin, “Weakly ordered nanostructured silver disilicate and its colloidal solutions: preparation and properties”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 938–947 ; Tech. Phys., 64:6 (2019), 884–892 |
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| 8. |
E. V. Astrova, V. P. Ulin, A. V. Parfeneva, V. B. Voronkov, “Fluorocarbon carbonization of nanocrystalline silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 29–32 ; Tech. Phys. Lett., 45:7 (2019), 664–667 |
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2017 |
| 9. |
S. A. Masalov, E. O. Popov, A. G. Kolosko, S. V. Filippov, V. P. Ulin, V. P. Evtikhiev, A. V. Atrashchenko, “Liquid-metal field electron source based on porous GaP”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1416–1422 ; Tech. Phys., 62:9 (2017), 1424–1430 |
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| 10. |
G. G. Zegrya, G. G. Savenkov, V. A. Morozov, A. G. Zegrya, N. V. Ulin, V. P. Ulin, A. A. Lukin, V. A. Bragin, I. A. Oskin, Yu. M. Mikhailov, “Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 501–506 ; Semiconductors, 51:4 (2017), 477–482 |
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| 11. |
V. P. Ulin, N. V. Ulin, F. Yu. Soldatenkov, “Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 481–496 ; Semiconductors, 51:4 (2017), 458–472 |
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2016 |
| 12. |
S. A. Masalov, A. V. Atrashchenko, V. P. Ulin, E. O. Popov, A. G. Kolosko, S. V. Filippov, “A study of the electrical properties of the porous GaP (111) surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:22 (2016), 39–48 ; Tech. Phys. Lett., 42:11 (2016), 1118–1121 |
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2013 |
| 13. |
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, A. B. Gordeeva, V. N. Petrov, “Reflectance anisotropy spectroscopy of metal nanoclusters formed on semiconductor surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 98:10 (2013), 687–692 ; JETP Letters, 98:10 (2013), 614–618  |
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1991 |
| 14. |
D. A. Vinokurov, V. M. Lantratov, M. A. Sinicin, V. P. Ulin, N. N. Faleev, O. M. Fedorova, Ya. L. Shaiovich, B. S. Yavich, “Свойства и особенности кристаллизации эпитаксиальных слоев GaAs,
выращенных на подложках Si(100) методом двухстадийного осаждения в МОС
гидридном процессе”, Fizika i Tekhnika Poluprovodnikov, 25:6 (1991), 1022–1029 |
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1989 |
| 15. |
M. M. Sobolev, P. N. Brunkov, S. G. Konnikov, M. N. Stepanova, V. G. Nikitin, V. P. Ulin, A. Sh. Dolbaya, T. D. Kamushadze, R. M. Maisuradze, “Механизм компенсации в многослойных структурах на основе
нелегированного GaAs, выращенных из раствора-расплава в Ga”, Fizika i Tekhnika Poluprovodnikov, 23:6 (1989), 1058–1065 |
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1987 |
| 16. |
K. Yu. Kizhaev, S. G. Konnikov, S. A. Nikishin, K. Yu. Pogrebickii, V. P. Ulin, N. N. Faleev, L. I. Flaks, “Widening transition layers in heterostructures, based on $In\,Ga\,As\,P$ solid-solutions, caused by elastic tensions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:3 (1987), 132–136 |
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1986 |
| 17. |
Zh. I. Alferov, B. Ya. Ber, D. Z. Garbuzov, K. Yu. Kizhaev, V. V. Krasovskii, S. A. Nikishin, D. V. Sinyavskii, V. P. Ulin, “Formation of transition layers in heterostructures based on $Ga\,As-Al\,As$ solid-solutions during the liquid-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:6 (1986), 335–341 |
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1984 |
| 18. |
R. S. Vartanyan, A. G. Mashevskii, M. A. Sinicin, V. P. Ulin, B. S. Yavich, A. A. Yakovenko, “Электрофизические характеристики метастабильных твердых растворов
(Ge$_{2}$)$_{x}$(GaAs)$_{1-x}$ и влияние на них термообработки”, Fizika i Tekhnika Poluprovodnikov, 18:8 (1984), 1438–1445 |
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