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Gaivan, Sergei Leonidovich

Statistics Math-Net.Ru
Total publications: 7
Scientific articles: 7

Number of views:
This page:76
Abstract pages:839
Full texts:495

https://www.mathnet.ru/eng/person89993
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List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
1999
1. P. I. Khadzhi, D. V. Tkachenko, S. L. Gaivan, “Characteristic features of the steady-state transmission (reflection) by a thin semiconductor film in the exciton part of the spectrum”, Kvantovaya Elektronika, 27:3 (1999),  265–268  mathnet [Quantum Electron., 29:6 (1999), 542–545  isi] 1
2. P. I. Khadzhi, A. M. Rusanov, S. L. Gaivan, “Cavity-free optical bistability of a thin semiconductor film in the exciton region of the spectrum”, Kvantovaya Elektronika, 27:3 (1999),  262–264  mathnet [Quantum Electron., 29:6 (1999), 539–541  isi] 26
1997
3. P. I. Khadzhi, S. L. Gaivan, “Nonlinear transmission of light by a thin semiconductor film in the exciton resonance region”, Kvantovaya Elektronika, 24:6 (1997),  546–550  mathnet [Quantum Electron., 27:6 (1997), 532–535  isi] 5
1996
4. P. I. Khadzhi, S. L. Gaivan, “Cavity-free optical bistability in a thin semiconductor film when excitons and biexcitons are generated”, Kvantovaya Elektronika, 23:11 (1996),  1009–1012  mathnet [Quantum Electron., 26:11 (1996), 984–987  isi] 1
5. P. I. Khadzhi, S. L. Gaivan, “Nonlinear interaction of an ultrashort light pulse with a thin semiconductor film in the exciton spectral range”, Kvantovaya Elektronika, 23:9 (1996),  837–840  mathnet [Quantum Electron., 26:9 (1996), 816–819  isi] 1
6. P. I. Khadzhi, S. L. Gaivan, “Interaction of an ultrashort light pulse with thin semiconductor films in the exciton part of the spectrum”, Kvantovaya Elektronika, 23:5 (1996),  451–454  mathnet [Quantum Electron., 26:5 (1996), 441–444  isi] 2
1995
7. P. I. Khadzhi, S. L. Gaivan, “Nonlinear interaction of an ultrashort light pulse with a thin semiconductor film under conditions of two-photon excitation of biexcitons”, Kvantovaya Elektronika, 22:9 (1995),  929–932  mathnet [Quantum Electron., 25:9 (1995), 897–900  isi] 11

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