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Kvantovaya Elektronika, 1996, Volume 23, Number 9, Pages 837–840 (Mi qe789)  

This article is cited in 1 scientific paper (total in 1 paper)

Nonlinear optical phenomena

Nonlinear interaction of an ultrashort light pulse with a thin semiconductor film in the exciton spectral range

P. I. Khadzhi, S. L. Gaivan

Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
Full-text PDF (114 kB) Citations (1)
Abstract: A study is reported of the influence of saturation of the dipole moment of an exciton transition on transient transmission of an ultrashort laser pulse by a semiconductor film in the exciton spectral range. A threshold is predicted at which the transmission changes from total reflection by a film to total bleaching of the film, as the rate of excitation is increased. An analogue of the McCall–Hahn area theorem is derived for ultrashort pulses interacting with a film. When the nonlinear parameter is large, the dependence of the area of a pulse transmitted by a film on the area of an incident pulse becomes multivalued.
Received: 01.01.1996
English version:
Quantum Electronics, 1996, Volume 26, Issue 9, Pages 816–819
DOI: https://doi.org/10.1070/QE1996v026n09ABEH000789
Bibliographic databases:
Document Type: Article
PACS: 78.20.Ci, 61.80.Az, 42.65.Re
Language: Russian


Citation: P. I. Khadzhi, S. L. Gaivan, “Nonlinear interaction of an ultrashort light pulse with a thin semiconductor film in the exciton spectral range”, Kvantovaya Elektronika, 23:9 (1996), 837–840 [Quantum Electron., 26:9 (1996), 816–819]
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  • https://www.mathnet.ru/eng/qe/v23/i9/p837
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Квантовая электроника Quantum Electronics
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