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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
A. E. Ieshkin, A. B. Tolstoguzov, N. G. Korobeishchikov, V. O. Pelenovich, V. S. Chernysh, “Gas-dynamic sources of cluster ions for basic and applied research”, UFN, 192:7 (2022), 722–753  ; Phys. Usp., 65:7 (2022), 677–705   |
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2019 |
| 2. |
Yu. V. Balakshin, A. V. Kozhemiako, S. Petrovic, M. Erich, A. A. Shemukhin, V. S. Chernysh, “Influence of the charge state of xenon ions on the depth distribution profile upon implantation into silicon”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1030–1036  ; Semiconductors, 53:8 (2019), 1011–1017 |
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2018 |
| 3. |
Yu. V. Balakshin, A. A. Shemukhin, A. V. Nazarov, A. V. Kozhemiako, V. S. Chernysh, “In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1900–1907 ; Tech. Phys., 63:12 (2018), 1861–1867 |
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2017 |
| 4. |
A. V. Kozhemiako, Yu. V. Balakshin, A. A. Shemukhin, V. S. Chernysh, “Study of the distribution profile of iron ions implanted into silicon”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 778–782 ; Semiconductors, 51:6 (2017), 745–750 |
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A. E. Ieshkin, K. D. Kushkina, D. S. Kireev, Yu. A. Ermakov, V. S. Chernysh, “Polishing superhard material surfaces with gas-cluster ion beams”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 18–23 ; Tech. Phys. Lett., 43:1 (2017), 95–97 |
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2005 |
| 6. |
R. V. Volkov, D. M. Golishnikov, V. M. Gordienko, A. B. Savel'ev, V. S. Chernysh, “Implantation of high-energy ions produced by femtosecond laser pulses”, Kvantovaya Elektronika, 35:1 (2005), 33–37 [Quantum Electron., 35:1 (2005), 33–37 ] |
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