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This article is cited in 15 scientific papers (total in 15 papers)
Polishing superhard material surfaces with gas-cluster ion beams
A. E. Ieshkina, K. D. Kushkinaa, D. S. Kireeva, Yu. A. Ermakovb, V. S. Chernyshab a Lomonosov Moscow State University
b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
Abstract:
We have studied the influence of bombardment with accelerated gas-cluster ions on the surface topography of silicon carbide and diamond. Atomic-force microscopy shows that exposure to 10-keV gas-cluster ions at a total dose above 10$^{16}$ cm$^{-2}$ leads to smoothing of the surface relief. The ion-etching rate and efficiency of the surface relief smoothing as dependent on the thickness of removed layer have been estimated. Raman-spectroscopy data show that surface irradiation with gas-cluster ions does not introduce defects into the crystalline structure of irradiated material.
Received: 16.08.2016
Citation:
A. E. Ieshkin, K. D. Kushkina, D. S. Kireev, Yu. A. Ermakov, V. S. Chernysh, “Polishing superhard material surfaces with gas-cluster ion beams”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 18–23; Tech. Phys. Lett., 43:1 (2017), 95–97
Linking options:
https://www.mathnet.ru/eng/pjtf6012 https://www.mathnet.ru/eng/pjtf/v43/i2/p18
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