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Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 12, Pages 1900–1907
DOI: https://doi.org/10.21883/JTF.2018.12.46796.41-18 (Mi jtf5756) 		 
This article is cited in 19 scientific papers (total in 19 papers)

Electrophysics, electron and ion beams, physics of accelerators

In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods

Yu. V. Balakshina, A. A. Shemukhina, A. V. Nazarova, A. V. Kozhemiakob, V. S. Chernyshb

a Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
b Faculty of Physics, Lomonosov Moscow State University
Full-text PDF (744 kB) Citations (19)
DOI: https://doi.org/10.21883/JTF.2018.12.46796.41-18
Abstract: The method of Rutherford backscattering (RBS) with channeling is widely used in compositional analysis and structural determination. An experimental process line for in situ ion implantation and RBS spectrometry is presented, and its technical parameters are given. The parameters of a probing beam needed to reach a several-percent error in the study of distribution profiles of impurities and defects are detailed. The resolution of this method was estimated using the spectrum of alpha particles produced in the decay of $^{239}$Pu and based on the RBS spectrum from a silicon monocrystal. The implantation of Xe$^+$ ions with an energy of 100 keV into a silicon monocrystal and the RBS analysis of targets in the channeling mode were performed without breach of vacuum conditions. The distribution profiles of implanted atoms and defects in irradiated monocrystals were examined.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.581.21.0021
Received: 25.01.2018
Revised: 31.03.2018
English version:
Technical Physics, 2018, Volume 63, Issue 12, Pages 1861–1867
DOI: https://doi.org/10.1134/S106378421812023X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. V. Balakshin, A. A. Shemukhin, A. V. Nazarov, A. V. Kozhemiako, V. S. Chernysh, “In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods”, Zhurnal Tekhnicheskoi Fiziki, 88:12 (2018), 1900–1907; Tech. Phys., 63:12 (2018), 1861–1867
Citation in format AMSBIB
\Bibitem{BalSheNaz18}
\by Yu.~V.~Balakshin, A.~A.~Shemukhin, A.~V.~Nazarov, A.~V.~Kozhemiako, V.~S.~Chernysh
\paper In situ modification and analysis of the composition and crystal structure of a silicon target by ion-beam methods
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 12
\pages 1900--1907
\mathnet{http://mi.mathnet.ru/jtf5756}
\crossref{https://doi.org/10.21883/JTF.2018.12.46796.41-18}
\elib{https://elibrary.ru/item.asp?id=36929270}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 12
\pages 1861--1867
\crossref{https://doi.org/10.1134/S106378421812023X}
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    • This publication is cited in the following 19 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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