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Publications in Math-Net.Ru |
Citations |
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2009 |
| 1. |
E. I. Davydova, M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, M. B. Uspenskiy, “High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm”, Kvantovaya Elektronika, 39:8 (2009), 723–726   [Quantum Electron., 39:8 (2009), 723–726   ] |
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| 2. |
E. I. Davydova, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, A. V. Sukharev, M. B. Uspenskiy, V. A. Shishkin, “High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AlGaAs heterostructures”, Kvantovaya Elektronika, 39:1 (2009), 18–20 [Quantum Electron., 39:1 (2009), 18–20 ] |
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2008 |
| 3. |
M. V. Zverkov, V. P. Konyaev, V. V. Krichevskii, M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov, A. V. Sukharev, “Double integrated nanostructures for pulsed 0.9-μm laser diodes”, Kvantovaya Elektronika, 38:11 (2008), 989–992 [Quantum Electron., 38:11 (2008), 989–992 ] |
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| 4. |
V. P. Duraev, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, D. R. Sabitov, M. A. Sumarokov, A. V. Sukharev, “Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes”, Kvantovaya Elektronika, 38:2 (2008), 97–102 [Quantum Electron., 38:2 (2008), 97–102 ] |
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2005 |
| 5. |
V. P. Duraev, A. A. Marmalyuk, A. A. Padalitsa, A. V. Petrovskii, Yu. L. Ryaboshtan, M. A. Sumarokov, A. V. Sukharev, “Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050–1100-nm spectral range”, Kvantovaya Elektronika, 35:10 (2005), 909–911 [Quantum Electron., 35:10 (2005), 909–911 ] |
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