Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes

An abrupt decrease in the lasing wavelength was observed with increasing the pump current in injection semiconductor lasers emitting in the spectral range from 1050 to 1080 nm. The consideration of segregation phenomena, which strongly distort the nominal profile of the quantum-well active region of InGaAs/(Al)GaAs laser heterostructures during their growth, made it possible to calculate the energy spectrum of these heterostructures, which agrees with the results of spectral measurements. The energy levels of dimensional quantisation involved in lasing with decreasing the laser wavelength are identified based on the calculation.