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Publications in Math-Net.Ru |
Citations |
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2024 |
| 1. |
I. N. Zavestovskaya, A. A. Fronya, I. M. Tupitsyn, V. A. Gushchin, A. E. Sinyavin, L. I. Russu, E. A. Cheshev, A. L. Koromyslov, M. S. Grigor'eva, E. I. Mavreshko, “Spectral dependence of bovine coronavirus photoinactivation under irradiation by UV-A, UV-B, and UV-C light-emitting diodes”, Kvantovaya Elektronika, 54:1 (2024), 63–66  [Bull. Lebedev Physics Institute, 51:suppl. 4 (2024), S345–S350] |
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2023 |
| 2. |
A. Yu. Kanaev, A. L. Koromyslov, Yu. A. Prokhorchuk, I. M. Tupitsyn, E. A. Cheshev, “A disc-shaped composite ceramic active element with multipass and multichannel pumping”, Kvantovaya Elektronika, 53:12 (2023), 898–901 [Bull. Lebedev Physics Institute, 51:suppl. 3 (2024), S201–S206] |
| 3. |
A. Yu. Kanaev, A. L. Koromyslov, K. V. Lopukhin, I. M. Tupitsyn, E. A. Cheshev, “Fabrication and study of generation characteristics of monolithic ceramic microchip Nd<sup>3+</sup>:YAG/Cr<sup>4+</sup>:YAG lasers”, Kvantovaya Elektronika, 53:9 (2023), 684–688 [Bull. Lebedev Physics Institute, 51:suppl. 1 (2024), S9–S15] |
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2022 |
| 4. |
S. M. Pershin, V. S. Makarov, M. Ya. Grishin, V. A. Zavozin, A. L. Koromyslov, V. N. Lednev, P. A. Sdvizhenskii, I. Procházka, I. M. Tupitsyn, E. A. Cheshev, “New regime of diode laser operation: 200-ps front edge of a nanosecond pulse”, Kvantovaya Elektronika, 52:11 (2022), 1050–1053 [Bull. Lebedev Physics Institute, 50:suppl. 3 (2023), S383–S388] |
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| 5. |
I. N. Zavestovskaya, V. A. Gushchin, L. I. Russu, E. A. Cheshev, A. L. Koromyslov, I. M. Tupitsyn, A. A. Fronya, M. S. Grigoryeva, “Inactivation of coronaviruses under irradiation by UVA-range light-emitting diodes”, Kvantovaya Elektronika, 52:1 (2022), 83–86 [Quantum Electron., 52:1 (2022), 83–86   ] |
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2021 |
| 6. |
A. L. Koromyslov, I. M. Tupitsyn, E. A. Cheshev, R. V. Chulkov, “Transverse mode locking of the Stokes component of a diode end-pumped Q-switched Nd : KGW laser”, Kvantovaya Elektronika, 51:7 (2021), 582–585  [Quantum Electron., 51:7 (2021), 582–585 ] |
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2019 |
| 7. |
A. L. Koromyslov, I. M. Tupitsyn, E. A. Cheshev, “Dual-wavelength Q-switched laser based on a lens-shaped Nd : YLF active element and a Cr<sup>4+</sup> : YAG passive Q-switch”, Kvantovaya Elektronika, 49:2 (2019), 95–97 [Quantum Electron., 49:2 (2019), 95–97 ] |
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2018 |
| 8. |
V. V. Bezotosnyi, V. V. Balashov, V. D. Bulaev, A. A. Kaminskii, A. Yu. Kanaev, V. B. Kravchenko, A. V. Kiselev, Yu. L. Kopylov, A. L. Koromyslov, O. N. Krokhin, K. V. Lopukhin, S. L. Lysenko, M. A. Pankov, K. A. Polevov, Yu. M. Popov, E. A. Cheshev, I. M. Tupitsyn, “Lasing characteristic of new Russian laser ceramics”, Kvantovaya Elektronika, 48:9 (2018), 802–806 [Quantum Electron., 48:9 (2018), 802–806 ] |
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| 9. |
V. V. Bezotosnyi, V. P. Gordeev, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Modelling and experimental study of temperature profiles in cw laser diode bars”, Kvantovaya Elektronika, 48:2 (2018), 115–118 [Quantum Electron., 48:2 (2018), 115–118 ] |
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2017 |
| 10. |
V. V. Bezotosnyi, A. A. Kozyrev, N. S. Kondakova, S. A. Kondakov, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, Yu. M. Popov, E. A. Cheshev, “Quasi-cw 808-nm 300-W laser diode arrays”, Kvantovaya Elektronika, 47:1 (2017), 5–6 [Quantum Electron., 47:1 (2017), 5–6 ] |
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2016 |
| 11. |
V. V. Bezotosnyi, O. N. Krokhin, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Spectral features and thermal resistance of 976-nm cw laser diodes with a power up to 15 W”, Kvantovaya Elektronika, 46:8 (2016), 679–681 [Quantum Electron., 46:8 (2016), 679–681 ] |
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2015 |
| 12. |
V. V. Bezotosnyi, O. N. Krokhin, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “980-nm, 15-W cw laser diodes on F-mount-type heat sinks”, Kvantovaya Elektronika, 45:12 (2015), 1088–1090 [Quantum Electron., 45:12 (2015), 1088–1090 ] |
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2014 |
| 13. |
V. V. Bezotosnyi, O. N. Krokhin, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Thermal modelling of high-power laser diodes mounted using various types of submounts”, Kvantovaya Elektronika, 44:10 (2014), 899–902 [Quantum Electron., 44:10 (2014), 899–902 ] |
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| 14. |
V. V. Bezotosnyi, O. N. Krokhin, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Emission parameters and thermal management of single high-power 980-nm laser diodes”, Kvantovaya Elektronika, 44:2 (2014), 145–148 [Quantum Electron., 44:2 (2014), 145–148 ] |
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2012 |
| 15. |
E. E. Ashkinazi, V. V. Bezotosnyi, V. Yu. Bondarev, V. I. Kovalenko, V. I. Konov, O. N. Krokhin, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, A. F. Popovich, V. G. Ral'chenko, E. A. Cheshev, “Increasing the output power of single 808-nm laser diodes using diamond submounts produced by microwave plasma chemical vapour deposition”, Kvantovaya Elektronika, 42:11 (2012), 959–960 [Quantum Electron., 42:11 (2012), 959–960 ] |
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2009 |
| 16. |
V. V. Bezotosnyi, M. V. Gorbunkov, P. V. Kostryukov, V. G. Tunkin, E. A. Cheshev, D. V. Yakovlev, “Symmetry of the spatial structure of radiation upon transverse mode locking in an astigmatic resonator laser”, Kvantovaya Elektronika, 39:8 (2009), 759–764 [Quantum Electron., 39:8 (2009), 759–764 ] |
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| 17. |
V. V. Bezotosnyi, V. Yu. Bondarev, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Laser diodes emitting up to 25 W at 808 nm”, Kvantovaya Elektronika, 39:3 (2009), 241–243 [Quantum Electron., 39:3 (2009), 241–243 ] |
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2007 |
| 18. |
V. V. Bezotosnyi, V. Yu. Bondarev, V. I. Kovalenko, O. N. Krokhin, V. F. Pevtsov, Yu. M. Popov, V. N. Tokarev, E. A. Cheshev, “Modification of metal film structure by radiation from a diode-pumped solid-state laser for improving the output parameters of high-power laser diodes”, Kvantovaya Elektronika, 37:11 (2007), 1055–1059 [Quantum Electron., 37:11 (2007), 1055–1059 ] |
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2005 |
| 19. |
V. V. Bezotosnyi, N. F. Glushchenko, I. D. Zalevskii, Yu. M. Popov, V. P. Semenkov, E. A. Cheshev, “Highly efficient, compact diode-pumped acousto-optically <i>Q</i>-switched 1.064-μm Nd<sup>3+</sup>:YAG laser operating in cw and pulsed regimes”, Kvantovaya Elektronika, 35:6 (2005), 507–510 [Quantum Electron., 35:6 (2005), 507–510 ] |
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