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Kvantovaya Elektronika, 2009, Volume 39, Number 3, Pages 241–243 (Mi qe13979)  

This article is cited in 15 scientific papers (total in 15 papers)

Lasers

Laser diodes emitting up to 25 W at 808 nm

V. V. Bezotosnyia, V. Yu. Bondareva, O. N. Krokhina, G. T. Mikayelyanb, V. A. Oleshchenkoa, V. F. Pevtsova, Yu. M. Popova, E. A. Chesheva

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Inject Ltd., Saratov
Abstract: Crystals of high-power laser diodes are directly mounted on copper heat-removing elements. The maximum output power of 25 W is obtained many times in a 808-nm cw laser with the 150-μm-wide strip contact at 20 °C. After training tests at the output power of 6 W for 200 hours, the yield of acceptable samples was 80 %. No changes in the output parameters were observed after tests for 70 hours at the output power of 8.5 W. Tests are being continued.
Received: 15.10.2008
Revised: 12.12.2008
English version:
Quantum Electronics, 2009, Volume 39, Issue 3, Pages 241–243
DOI: https://doi.org/10.1070/QE2009v039n03ABEH013979
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Jf, 42.60.Lh
Language: Russian


Citation: V. V. Bezotosnyi, V. Yu. Bondarev, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, V. F. Pevtsov, Yu. M. Popov, E. A. Cheshev, “Laser diodes emitting up to 25 W at 808 nm”, Kvantovaya Elektronika, 39:3 (2009), 241–243 [Quantum Electron., 39:3 (2009), 241–243]
Linking options:
  • https://www.mathnet.ru/eng/qe13979
  • https://www.mathnet.ru/eng/qe/v39/i3/p241
  • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Квантовая электроника Quantum Electronics
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