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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
A. S. Usikov, S. P. Lebedev, A. D. Roenkov, I. S. Barash, S. V. Novikov, M. V. Puzyk, A. V. Zubov, Yu. N. Makarov, A. A. Lebedev, “Studying the sensitivity of graphene for biosensor applications”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020), 3–6   ; Tech. Phys. Lett., 46:5 (2020), 462–465 |
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2018 |
| 2. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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2016 |
| 3. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
8
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| 4. |
A. S. Usikov, H. Helava, A. Nikiforov, M. V. Puzyk, B. P. Papchenko, Yu. V. Kovaleva, Yu. N. Makarov, “Electrochemical etching of $p$–$n$-GaN/AlGaN photoelectrodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 80–87 ; Tech. Phys. Lett., 42:5 (2016), 482–485 |
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2001 |
| 5. |
I. L. Krestnikov, V. V. Lundin, A. V. Sakharov, D. A. Bedarev, E. E. Zavarin, Yu. G. Musikhin, N. M. Shmidt, A. F. Tsatsul'nikov, A. S. Usikov, N. N. Ledentsov, Zh. I. Alferov, “Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices”, UFN, 171:8 (2001), 857–858 ; Phys. Usp., 44:8 (2001), 815–816 |
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1988 |
| 6. |
L. A. Volkov, V. G. Danl'chenko, V. I. Korol'kov, A. A. Pulatov, B. V. Pushnii, T. S. Taborov, A. S. Usikov, “KINETICS OF PHOTOGRAPHIC FLOW IN ARSENIDE-GALLIUM STRUCTURES WITH THE
BUILT-IN POTENTIAL BARRIER”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988), 1565–1570 |
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1986 |
| 7. |
V. I. Kuchinskii, N. I. Maiorova, V. A. Mishurnii, E. L. Portnoĭ, B. V. Pushnii, V. B. Smirnitskiĭ, A. S. Usikov, “Injection heterolasers $Jn\,Ga\,As\,P/Jn\,P$ ($\lambda=1,5$-mu-m) with the distributed feedback obtained by liquid-phase and gaseous epitaxies”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986), 296–300 |
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1983 |
| 8. |
M. G. Vasilev, A. A. Gvozdev, A. T. Gorelenok, Yu. V. Gulyaev, V. F. Dvoryankin, V. P. Duraev, P. G. Eliseev, V. V. Kozhin, E. T. Nedelin, G. A. Sinitsyna, I. S. Tarasov, A. A. Telegin, A. S. Usikov, V. I. Shveĭkin, A. A. Shelyakin, “LOW-THRESHOLD BAND THICK HETEROLASERS BASED ON
INGAASP/INP(GAMMA-CONGRUENT-TO-1,3 MKM), OBTAINED BY HYBRID TECHNOLOGY”, Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983), 1413–1414 |
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