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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 9, Pages 80–87
(Mi pjtf6434)
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This article is cited in 2 scientific papers (total in 2 papers)
Electrochemical etching of $p$–$n$-GaN/AlGaN photoelectrodes
A. S. Usikovab, H. Helavab, A. Nikiforovc, M. V. Puzykad, B. P. Papchenkoa, Yu. V. Kovalevaa, Yu. N. Makarovbe a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Nitride Crystals Inc., USA
c Boston University, Photonics Center, USA
d Herzen State Pedagogical University of Russia, St. Petersburg
e Nitride Crystals Group, St.-Petersburg
Abstract:
Specific features of etching of GaN/AlGaN $p$–$n$ structures in a KOH-based electrolyte have been studied. It was found that the corrosion process first passes across $p$ layers through vertical channels associated with threading structural defects. Then, the corrosion process occurs in the lateral direction along $n$ layers of the structure, with local hollows and voids thereby formed. The lateral etching is due to the presence of positive piezoelectric charges at boundaries of $n$-AlGaN and $n$-GaN layers and positively charged ionized donors in the space-charge region of the $p$–$n$ junction.
Received: 16.12.2015
Citation:
A. S. Usikov, H. Helava, A. Nikiforov, M. V. Puzyk, B. P. Papchenko, Yu. V. Kovaleva, Yu. N. Makarov, “Electrochemical etching of $p$–$n$-GaN/AlGaN photoelectrodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016), 80–87; Tech. Phys. Lett., 42:5 (2016), 482–485
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https://www.mathnet.ru/eng/pjtf6434 https://www.mathnet.ru/eng/pjtf/v42/i9/p80
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