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Publications in Math-Net.Ru |
Citations |
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2020 |
1. |
A. N. Anisimov, R. A. Babunts, I. D. Breev, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020), 813–819 ; JETP Letters, 112:12 (2020), 774–779 |
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2018 |
2. |
I. V. Il'in, Yu. A. Uspenskaya, D. D. Kramushchenko, M. V. Muzafarova, V. A. Soltamov, E. N. Mokhov, P. G. Baranov, “Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies”, Fizika Tverdogo Tela, 60:4 (2018), 641–659 ; Phys. Solid State, 60:4 (2018), 644–662 |
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3. |
A. N. Anisimov, V. A. Soltamov, I. D. Breev, M. M. Khalisov, R. A. Babunts, A. V. Ankudinov, P. G. Baranov, “Physical foundations of an application of scanning probe with spin centers in SiC for the submicron quantum probing of magnetic fields and temperatures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 108:9 (2018), 643–649 ; JETP Letters, 108:9 (2018), 610–615 |
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4. |
A. N. Anisimov, R. A. Babunts, M. V. Muzafarova, A. P. Bundakova, V. A. Soltamov, P. G. Baranov, “An optical quantum thermometer with submicron resolution based on the cross-relaxation phenomenon of spin levels”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018), 34–41 ; Tech. Phys. Lett., 44:9 (2018), 772–775 |
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2017 |
5. |
E. N. Mokhov, O. P. Kazarova, V. A. Soltamov, S. S. Nagalyuk, “Influence of neutron irradiation on etching of SiC in KOH”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1104–1106 ; Tech. Phys., 62:7 (2017), 1119–1121 |
6. |
A. N. Anisimov, R. A. Babunts, M. V. Muzafarova, A. P. Bundakova, I. V. Il'in, V. A. Soltamov, N. G. Romanov, P. G. Baranov, “An optical quantum thermometer with submicrometer resolution based on the level anticrossing phenomenon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 70–77 ; Tech. Phys. Lett., 43:4 (2017), 355–357 |
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2016 |
7. |
M. V. Muzafarova, I. V. Il'in, A. N. Anisimov, E. N. Mokhov, V. A. Soltamov, P. G. Baranov, “Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice”, Fizika Tverdogo Tela, 58:12 (2016), 2319–2335 ; Phys. Solid State, 58:12 (2016), 2406–2422 |
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8. |
A. N. Anisimov, R. A. Babunts, S. V. Kidalov, E. N. Mokhov, V. A. Soltamov, P. G. Baranov, “Spin centres in SiC for all-optical nanoscale quantum sensing under ambient conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016), 83 ; JETP Letters, 104:2 (2016), 82–87 |
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9. |
A. N. Anisimov, D. O. Tolmachev, R. A. Babunts, M. V. Muzafarova, A. P. Bundakova, I. V. Il'in, V. A. Soltamov, P. G. Baranov, E. N. Mokhov, G. V. Astakhov, V. Dyakonov, “An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 22–29 ; Tech. Phys. Lett., 42:6 (2016), 618–621 |
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10. |
V. A. Soltamov, P. G. Baranov, “Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide”, UFN, 186:6 (2016), 678–684 ; Phys. Usp., 59:6 (2016), 605–610 |
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2012 |
11. |
R. A. Babunts, A. A. Soltamova, D. O. Tolmachev, V. A. Soltamov, A. S. Gurin, A. N. Anisimov, V. L. Preobrazhenskii, P. G. Baranov, “Temperature-scanned magnetic resonance and the evidence
of two-way transfer of a nitrogen nuclear spin hyperfine interaction
in coupled NV–N pairs in diamond”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:8 (2012), 477–480 ; JETP Letters, 95:8 (2012), 429–432 |
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Organisations |
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