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Publications in Math-Net.Ru |
Citations |
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2012 |
| 1. |
I. N. Kotel’nikov, S. E. Dizhur, E. N. Morozova, È. V. Devyatov, V. T. Dolgopolov, “Zero-bias tunneling anomaly in a two-dimensional electron system with disorder”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:9 (2012), 646–650   ; JETP Letters, 96:9 (2012), 577–581   |
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2005 |
| 2. |
I. N. Kotel’nikov, S. E. Dizhur, “Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:9 (2005), 574–577 ; JETP Letters, 81:9 (2005), 458–461 |
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2004 |
| 3. |
E. M. Dizhur, A. N. Voronovskii, A. V. Fedorov, I. N. Kotel’nikov, S. E. Dizhur, “Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004), 489–492 ; JETP Letters, 80:6 (2004), 433–435 |
10
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2001 |
| 4. |
A. Ya. Shul'man, I. N. Kotel’nikov, N. A. Varvanin, E. N. Mirgorodskaya, “Tunneling spectroscopy of the electron exchange-correlation interaction in a Schottky barrier in a quantizing magnetic field: $n$-GaAs/Me junctions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001), 643–648 ; JETP Letters, 73:10 (2001), 573–578 |
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1993 |
| 5. |
V. G. Mokerov, B. K. Medvedev, I. N. Kotel’nikov, Yu. V. Fedorov, “Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping”, Dokl. Akad. Nauk, 332:5 (1993), 575–577 |
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1992 |
| 6. |
I. N. Kotel’nikov, V. A. Kokin, B. K. Medvedev, V. G. Mokerov, Y. A. Rzhanov, S. P. Anokhina, “Õàðàêòåðèñòèêà è îñîáåííîñòè ïðîâîäèìîñòè ïðèïîâåðõíîñòíûõ
$\delta$-ëåãèðîâàííûõ ñëîåâ â GaAs ïðè èçìåíåíèè êîíöåíòðàöèè äâóìåðíûõ
ýëåêòðîíîâ”, Fizika i Tekhnika Poluprovodnikov, 26:8 (1992), 1462–1470 |
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1990 |
| 7. |
N. A. Varvanin, V. N. Gubankov, I. N. Kotel’nikov, B. K. Medvedev, V. G. Mokerov, N. A. Mordovets, “Ôîòîïðîâîäèìîñòü â îáëàñòè öèêëîòðîííîãî ðåçîíàíñà äâóìåðíîãî
ýëåêòðîííîãî ãàçà â GaAs/AlGaAs ïðè áîëüøèõ ôàêòîðàõ çàïîëíåíèÿ”, Fizika i Tekhnika Poluprovodnikov, 24:4 (1990), 635–637 |
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1989 |
| 8. |
S. D. Ganichev, K. Y. Glukh, I. N. Kotel’nikov, N. A. Mordovets, A. Ya. Shul'man, I. D. Yaroshetskiĭ, “POINTED FAST-RESPONSE PHOTODETECTOR OF LASER SUBMILLIMETER EMISSION”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989), 8–10 |
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1987 |
| 9. |
I. N. Kotel’nikov, D. K. Chepikov, E. G. Chirkova, A. Ya. Shul'man, “Determination of the Parameters of the Band-Bending Range in $n$-GaAs/Metal Transitions Using Tunnel Current–Voltage Characteristics”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1854–1862 |
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1986 |
| 10. |
I. N. Kotel’nikov, N. A. Mordovets, A. Ya. Shul'man, “ANALYSIS OF DIODE SENSITIVITY WITH THE SCHOTTKY-BARRIER TO INFRARED
STUDIES”, Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986), 2199–2209 |
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1985 |
| 11. |
I. N. Kotel’nikov, I. L. Beinikhes, A. Ya. Shul'man, “On tunnelling in metal-semiconductor $n$-$\mathrm{GaAs}/\mathrm{Au}$ junctions with selfconsistent Schottky barrier”, Fizika Tverdogo Tela, 27:2 (1985), 401–415 |
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